Datasheet IRF5305 - 2
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 133 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
Versión de texto del documento
IRF5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A ––– ––– -25 V IDSS Drain-to-Source Leakage Current µA DS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = -16A Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = -28V tr Rise Time ––– 66 ––– ID = -16A ns td(off) Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω tf Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10 Between lead, D L ––– 4.5 ––– D Internal Drain Inductance 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1200 ––– VGS = 0V Coss Output Capacitance ––– 520 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– -31 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G -110 (Body Diode) ––– ––– p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A Qrr Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C V DD = -25V, starting TJ = 25°C, L = 2.1mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -16A. (See Figure 12) 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A ––– ––– -25 V IDSS Drain-to-Source Leakage Current µA DS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = -16A Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = -28V tr Rise Time ––– 66 ––– ID = -16A ns td(off) Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω tf Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10 Between lead, D L ––– 4.5 ––– D Internal Drain Inductance 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1200 ––– VGS = 0V Coss Output Capacitance ––– 520 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– -31 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G -110 (Body Diode) ––– ––– p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A Qrr Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C V DD = -25V, starting TJ = 25°C, L = 2.1mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -16A. (See Figure 12) 2 www.irf.com