Datasheet IGB110S101 (Infineon) - 8
Fabricante | Infineon |
Descripción | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
Páginas / Página | 18 / 8 — Public. IGB110S101. 5 Electrical characteristics diagrams. [A]. tot. C … |
Revisión | 01_00 |
Formato / tamaño de archivo | PDF / 1.2 Mb |
Idioma del documento | Inglés |
Public. IGB110S101. 5 Electrical characteristics diagrams. [A]. tot. C [°C]. [K/W. thJC. DS [V]. p [s]
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Public
CoolGaNT MTransistor 100 V G3
IGB110S101 5 Electrical characteristics diagrams
Diagram 1: Power dissipation Diagram 2: Drain Current 20 25 20 15
]
15
[W
10
[A] P tot I D
10 5 5 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
T C [°C] T C [°C]
Ptot=f(TC) I =f( D TC) Diagram 3: Safe operating area Diagram 4: Max. transient thermal impedance 103 101 0.5 102 1 us 10 µs 0.2 100 100 µs 0.1 101
]
0.05
[A]
1 ms
[K/W I D
10 ms 0.02 100
Z thJC
DC 10 1 0.01 10 1 single pulse 10 2 10 2 10 1 100 101 102 103 10 6 10 5 10 4 10 3 10 2 10 1 100 101 102
V DS [V] t p [s]
I =f( D VDS); TC=25 °C; D=0; parameter: tp ZthJC =f(tP); parameter: D=tp/T Datasheet Revision 1.1 https://www.infineon.com 8 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer