Datasheet IGB110S101 (Infineon) - 3
| Fabricante | Infineon |
| Descripción | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| Páginas / Página | 18 / 3 — Public. IGB110S101. 1 Maximum ratings. Table 2 Maximum ratings |
| Revisión | 01_00 |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Public. IGB110S101. 1 Maximum ratings. Table 2 Maximum ratings
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 3 link to page 3 link to page 3 link to page 3 link to page 3
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 1 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Stresses beyond max ratings may cause permanent damage to the device. For optimum lifetime and reliability, Infineon recommends operating conditions that do not continuously exceed 80 % of the maximum ratings stated (unless otherwise explicitly stated). For further information, contact your local Infineon sales office.
Table 2 Maximum ratings
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Continuous drain‑source voltage VDS ‑ ‑ 100 V VGS=0 V Pulsed drain‑source voltage 1) VDS, pulse ‑ ‑ 120 V VGS=0 V, 1 h total time 23 VGS=5 V, TC=25 °C Continuous drain current ID ‑ ‑ A 9.0 VGS=5 V, TA=25 °C, RthJA=50 °C/W 2) 210 Tj=25 °C Pulsed drain current 3) ID,pulse ‑ ‑ A 97 Tj=150 °C Pulsed gate‑source voltage 1) VGS ‑6.5 ‑ 6.5 V Pulsed 100 h total time 15 TC=25 °C Power dissipation Ptot ‑ ‑ W 2.5 TA=25 °C, RthJA=50 °C/W 2) Storage temperature Tstg ‑55 ‑ 150 °C ‑ Junction temperature Tj ‑40 1) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation. 2) Device on 4‑layer FR4 PCB, vertical in still air. 3) Pulse current limited by transfer characteristic. Datasheet Revision 1.1 https://www.infineon.com 3 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 1 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Stresses beyond max ratings may cause permanent damage to the device. For optimum lifetime and reliability, Infineon recommends operating conditions that do not continuously exceed 80 % of the maximum ratings stated (unless otherwise explicitly stated). For further information, contact your local Infineon sales office.
Table 2 Maximum ratings
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Continuous drain‑source voltage VDS ‑ ‑ 100 V VGS=0 V Pulsed drain‑source voltage 1) VDS, pulse ‑ ‑ 120 V VGS=0 V, 1 h total time 23 VGS=5 V, TC=25 °C Continuous drain current ID ‑ ‑ A 9.0 VGS=5 V, TA=25 °C, RthJA=50 °C/W 2) 210 Tj=25 °C Pulsed drain current 3) ID,pulse ‑ ‑ A 97 Tj=150 °C Pulsed gate‑source voltage 1) VGS ‑6.5 ‑ 6.5 V Pulsed 100 h total time 15 TC=25 °C Power dissipation Ptot ‑ ‑ W 2.5 TA=25 °C, RthJA=50 °C/W 2) Storage temperature Tstg ‑55 ‑ 150 °C ‑ Junction temperature Tj ‑40 1) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation. 2) Device on 4‑layer FR4 PCB, vertical in still air. 3) Pulse current limited by transfer characteristic. Datasheet Revision 1.1 https://www.infineon.com 3 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer