Datasheet TMR130 (MDT) - 3

TMR130x
MicroAmpere High Frequency Response Omnipolar Magnetic Switch Sensor 1. Functional Block Diagram TMR130x series switch chips are composed of TMR VOUT sensors and signal processing circuits. The TMR BH BH sensor detects external magnetic field, generates an VOH analog voltage signal, and outputs a logical switch level after processing by the circuits as shown in Figure 1. VOL V H(S pole) CC BOPN BRPN BRPS BOPS Power management Figure 3. Switching characteristics Latch 3. Pin Configuration Op amp & VOUT Driver TMR GND Offset compensation 3 GND Figure 1. Block diagram 2. Switching Characteristics 1 2 V V 1 2 3 CC OUT VOUT GND VCC The Figure 2 shows the sensing direction is parallel SOT23-3 TO92S to the silkscreen surface of the package as shown Figure 4. Pin configuration by the arrow. Pin Number Name Function SOT23-3 TO92S 1 3 VCC Power supply 2 1 VOUT Output 3 2 GND Ground Figure 2. Sensing direction The output is “High”, when power is on at zero magnetic field. B is the external magnetic field along the sensing direction, BOPS (BOPN) is the operating point, BRPS (BRPN) is the release point, and hysteresis BH is define as the difference between BOPS and BRPS (BOPN and BRPN). The sensor outputs a low level, when the magnetic field along the sensing axis exceeds the operate point BOPS (BOPN), and the device outputs a high level, when the magnetic field is reduced below the release point BRPS (BRPN) as shown in Figure 3. MultiDimension Technology Co., Ltd. http://www.dowaytech.com/en/ 03 Document Outline 1. Functional Block Diagram 2. Switching Characteristics 3. Pin Configuration 4. Absolute Maximum Ratings 5. Electrical Specifications 6. Magnetic Specifications 7. Typical Supply Voltage Characteristics 8. Typical Temperature Characteristics 9. Application Information 10. Dimensions