Datasheet NCL30000 (ON Semiconductor) - 7

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NCL30000 Table 3. ELECTRICAL CHARACTERISTICS
(Continued) VMFP = 2.4 V, VControl = 4 V, Ct = 1 nF, VCS = 0 V, VZCD = 0 V, CDRV = 1 nF, VCC = 12 V, unless otherwise specified (For typical values, TJ = 25C. For min/max values, TJ = −40C to 125C, unless otherwise specified)
Characteristic Test Conditions Symbol Min Typ Max Unit RAMP CONTROL
Ct Peak Voltage VCOMP = open VCt(MAX) 4.775 4.93 5.025 V On Time Capacitor Charge Current VCOMP = open Icharge 235 275 297 mA VCt = 0 V to VCt(MAX) Ct Capacitor Discharge Duration VCOMP = open tCt(discharge) − 50 150 ns VCt = VCt(MAX) −100 mV to 500 mV PWM Propagation Delay dV/dt = 30 V/ms tPWM − 130 220 ns VCt = VControl − Ct(offset) to VDRV = 10%
ZERO CURRENT DETECTION
ZCD Arming Threshold VZCD = Increasing VZCD(ARM) 1.25 1.4 1.55 V ZCD Triggering Threshold VZCD = Decreasing VZCD(TRIG) 0.6 0.7 0.83 V ZCD Hysteresis VZCD(HYS) 500 700 900 mV ZCD Bias Current VZCD = 5 V IZCD − 2 − + 2 mA Positive Clamp Voltage IZCD = 3 mA VCL(POS) 9.8 10 12 V Negative Clamp Voltage IZCD = −2 mA VCL(NEG) −0.9 −0.7 −0.5 V ZCD Propagation Delay VZCD = 2 V to 0 V ramp, tZCD − 100 170 ns dV/dt = 20 V/ms VZCD = VZCD(TRIG) to VDRV = 90% Minimum ZCD Pulse Width tSYNC − 70 − ns Maximum Off Time in Absence of ZCD Falling VDRV = 10% to tstart 75 165 300 ms Transition Rising VDRV = 90%
DRIVE
Drive Resistance Isource = 100 mA ROH − 12 20 W Isink = 100 mA ROL − 6 13 Rise Time 10% to 90% trise − 35 80 ns Fall Time 90% to 10% tfall − 25 70 ns Drive Low Voltage VCC = VCC(on)−200 mV, Vout(start) − − 0.2 V Isink = 10 mA
CURRENT SENSE
Current Sense Voltage Threshold VILIM 0.45 0.5 0.55 V Leading Edge Blanking Duration VCS = 2 V, VDRV = 90% to 10% tLEB 100 195 350 ns Overcurrent Detection Propagation dV/dt = 10 V/ms tCS 40 100 170 ns Delay VCS = VILIM to VDRV = 10% Current Sense Bias Current VCS = 2 V ICS −1 − 1 mA
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