Datasheet BLF881 (Ampleon) - 7
| Fabricante | Ampleon |
| Descripción | UHF power LDMOS transistor |
| Páginas / Página | 18 / 7 — BLF881; BLF881S. UHF power LDMOS transistor. 7.2 Broadband RF figures. … |
| Formato / tamaño de archivo | PDF / 1.3 Mb |
| Idioma del documento | Inglés |
BLF881; BLF881S. UHF power LDMOS transistor. 7.2 Broadband RF figures. 7.2.1 DVB-T. Fig 7
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BLF881; BLF881S UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 DVB-T
001aal080 001aal081 9.0 50 25 0 Gp IMDshdr PAR η (dB) (dBc) D (dB) (%) 23 −10 8.0 PAR 40 21 −20 Gp ηD 19 −30 IMD 7.0 30 shdr 17 −40 6.0 20 15 −50 400 500 600 700 800 900 400 500 600 700 800 900 f (MHz) f (MHz) VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in common-source broadband test circuit as described in Section 8. Section 8.
Fig 7. DVB-T PAR at 0.01 % probability on the CCDF Fig 8. DVB-T power gain and shoulder distance as and drain efficiency as function of frequency; function of frequency; typical values typical values 7.3 Ruggedness in class-AB operation
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 7 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
BLF881; BLF881S UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 DVB-T
001aal080 001aal081 9.0 50 25 0 Gp IMDshdr PAR η (dB) (dBc) D (dB) (%) 23 −10 8.0 PAR 40 21 −20 Gp ηD 19 −30 IMD 7.0 30 shdr 17 −40 6.0 20 15 −50 400 500 600 700 800 900 400 500 600 700 800 900 f (MHz) f (MHz) VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in common-source broadband test circuit as described in Section 8. Section 8.
Fig 7. DVB-T PAR at 0.01 % probability on the CCDF Fig 8. DVB-T power gain and shoulder distance as and drain efficiency as function of frequency; function of frequency; typical values typical values 7.3 Ruggedness in class-AB operation
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 7 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents