Datasheet NE570 (ON Semiconductor)

link to page 9 NE570 Compandor The NE570 is a versatile low cost dual gain control circuit in which either channel may be used as a dynamic range compressor or expandor. Each channel has a full−wave rectifier to detect the average value of the signal, a linerarized temperature−compensated variable gain cell, and an operational amplifier. The NE570 is well suited for use in cellular radio and radio
http://onsemi.com
communications systems, modems, telephone, and satellite broadcast/receive audio systems.
MARKING DIAGRAM Features
• Complete Compressor and Expandor in One IC 16 • Temperature Compensated • Greater than 110 dB Dynamic Range NE570D • 1 Operates Down to 6.0 VDC AWLYYWWG • System Levels Adjustable with External Components
SOIC−16 WB
• Distortion may be Trimmed Out
D SUFFIX
1 •
CASE 751G
Pb−Free Packages are Available* Plastic Small Outline Package; 16 Leads; Body Width 7.5 mm
Applications
• Cellular Radio • Telephone Trunk Comandor A = Assembly Location • High Level Limiter WL = Wafer Lot • YY = Year Low Level Expandor − Noise Gate WW = Work Week • Dynamic Noise Reduction Systems G = Pb−Free Package • Voltage−Controlled Amplifier • Dynamic Filters
PIN CONNECTIONS MAXIMUM RATINGS
RECT_CAP_1 1 16 RECT_CAP_2
Rating Symbol Value Unit
RECT_IN_1 2 15 RECT_IN_2 Maximum Operating Voltage VCC 24 VDC DG_CELL_IN_1 3 14 DG_CELL_IN_2 Operating Ambient Temperature Range TA 0 to +70 °C GND 4 13 VCC Operating Junction Temperature TJ 150 °C INV_IN_1 5 12 INV_IN_2 Power Dissipation P RES_R3_1 RES_R3_2 D 400 mW 6 11 Thermal Resistance, Junction−to−Ambient R OUTPUT_1 OUTPUT_2 q 7 10 JA 105 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum THD_TRIM_1 8 9 THD_TRIM_2 Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the (Top View) Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
THD TRIM R3 INVERTER IN See detailed ordering and shipping information in the package R dimensions section on page 9 of this data sheet. 3 R2 20 kW VARIABLE 20 kW DG CELL IN − GAIN OUTPUT VREF R4 1.8 V + 30 kW R1 10 kW RECT IN RECTIFIER RECT CAP
Figure 1. Block Diagram
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2006 − Rev. 4 NE570/D