AO340130V P-Channel MOSFETGeneral DescriptionProduct Summary The AO3401 uses advanced trench technology to VDS -30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.0A with gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS=-10V) < 50mW for use as a load switch or in PWM applications. RDS(ON) (at VGS =-4.5V) < 60mW RDS(ON) (at VGS=-2.5V) < 85mW SOT23Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted ParameterSymbolMaximumUnits Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V TA=25°C Continuous Drain -4 ID Current TA=70°C -3.2 A Pulsed Drain Current C IDM -27 TA=25°C 1.4 PD W Power Dissipation B TA=70°C 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal CharacteristicsParameterSymbolTypMaxUnits Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W Rq Maximum Junction-to-Ambient A D JA Steady-State 100 125 °C/W Maximum Junction-to-Lead Steady-State RqJL 63 80 °C/W Rev 6.1: February 2024 www.aosmd.com Page 1 of 5