Datasheet SY58608U (Microchip) - 4
| Fabricante | Microchip |
| Descripción | 2.5V, high-speed, fully differential 1:2 LVDS fanout buffer optimized to provide two identical output copies with less than 20ps of skew and less than 10psPP total jitter |
| Páginas / Página | 24 / 4 — SY58608U. LVDS OUTPUTS DC ELECTRICAL CHARACTERISTICS (Note 1). Electrical … |
| Formato / tamaño de archivo | PDF / 2.7 Mb |
| Idioma del documento | Inglés |
SY58608U. LVDS OUTPUTS DC ELECTRICAL CHARACTERISTICS (Note 1). Electrical Characteristics:. Parameter. Symbol. Min. Typ. Max. Units
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SY58608U LVDS OUTPUTS DC ELECTRICAL CHARACTERISTICS (Note 1) Electrical Characteristics:
VCC = +2.5V ±5%, RL = 100Ω across the output pairs; TA = –40°C to +85°C, Unless otherwise stated.
Parameter Symbol Min. Typ. Max. Units Condition
Output Voltage Swing VOUT 250 325 — mV See Figure 6-2, 6-3. Differential Output V Voltage Swing DIFF_OUT 500 650 — mV See Figure 6-4. Output Common Mode V Voltage OCM 1.125 1.20 1.275 V See Figure 6-5. Change in Common V Mode Voltage OCM –50 — 50 mV See Figure 6-5.
Note 1:
The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium has been established.
AC ELECTRICAL CHARACTERISTICS (Note 1 ) Electrical Characteristics:
VCC = +2.5V ±5%, RL = 100Ω across the output pairs; Input tr/tf: 300 ps; TA = –40°C to +85°C, Unless otherwise stated.
Parameter Symbol Min. Typ. Max. Units Condition
3.2 4.25 — Gbps NRZ (Data) Maximum Frequency fMAX 2 3 — GHz VOUT > 200 mV (Clock) Propagation Delay 170 280 420 ps V t IN: 100 mV - 200 mV IN-to-Q PD 130 200 300 ps VIN: 200 mV - 800 mV Within Device Skew — 5 20 ps Note 2 tSKEW Part-to-Part Skew — — 135 ps Note 3 Carrier = 622 MHz Additive Phase Jitter tJITTER — 130 — fsRMS Integration Range: 12 kHz – 20 MHz Output Rise/Fall Time t (20% to 80%) r, tf 35 60 100 ps At full output swing Duty Cycle — 47 — 53 % Differential I/O
Note 1:
These high-speed parameters are guaranteed by design and characterization.
2:
Within-device skew is measured between two different outputs under identical input transitions.
3:
Part-to-part skew is defined for two parts with identical power supply voltages at the same temperature and no skew at the edges at the respective inputs. DS20005605A-page 4 2018 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Functional Description 2.1 Fail-Safe Input (FSI) 2.2 Input Clock Failure Case 3.0 Timing Diagrams 4.0 Typical Performance Curves 5.0 Additive Phase Noise Plot 6.0 Input Stage 7.0 Input Interface Applications 8.0 Pin Descriptions 9.0 Packaging Information 9.1 Package Marking Information Appendix A: Revision History Product Identification System Worldwide Sales and Service
SY58608U LVDS OUTPUTS DC ELECTRICAL CHARACTERISTICS (Note 1) Electrical Characteristics:
VCC = +2.5V ±5%, RL = 100Ω across the output pairs; TA = –40°C to +85°C, Unless otherwise stated.
Parameter Symbol Min. Typ. Max. Units Condition
Output Voltage Swing VOUT 250 325 — mV See Figure 6-2, 6-3. Differential Output V Voltage Swing DIFF_OUT 500 650 — mV See Figure 6-4. Output Common Mode V Voltage OCM 1.125 1.20 1.275 V See Figure 6-5. Change in Common V Mode Voltage OCM –50 — 50 mV See Figure 6-5.
Note 1:
The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium has been established.
AC ELECTRICAL CHARACTERISTICS (Note 1 ) Electrical Characteristics:
VCC = +2.5V ±5%, RL = 100Ω across the output pairs; Input tr/tf: 300 ps; TA = –40°C to +85°C, Unless otherwise stated.
Parameter Symbol Min. Typ. Max. Units Condition
3.2 4.25 — Gbps NRZ (Data) Maximum Frequency fMAX 2 3 — GHz VOUT > 200 mV (Clock) Propagation Delay 170 280 420 ps V t IN: 100 mV - 200 mV IN-to-Q PD 130 200 300 ps VIN: 200 mV - 800 mV Within Device Skew — 5 20 ps Note 2 tSKEW Part-to-Part Skew — — 135 ps Note 3 Carrier = 622 MHz Additive Phase Jitter tJITTER — 130 — fsRMS Integration Range: 12 kHz – 20 MHz Output Rise/Fall Time t (20% to 80%) r, tf 35 60 100 ps At full output swing Duty Cycle — 47 — 53 % Differential I/O
Note 1:
These high-speed parameters are guaranteed by design and characterization.
2:
Within-device skew is measured between two different outputs under identical input transitions.
3:
Part-to-part skew is defined for two parts with identical power supply voltages at the same temperature and no skew at the edges at the respective inputs. DS20005605A-page 4 2018 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Functional Description 2.1 Fail-Safe Input (FSI) 2.2 Input Clock Failure Case 3.0 Timing Diagrams 4.0 Typical Performance Curves 5.0 Additive Phase Noise Plot 6.0 Input Stage 7.0 Input Interface Applications 8.0 Pin Descriptions 9.0 Packaging Information 9.1 Package Marking Information Appendix A: Revision History Product Identification System Worldwide Sales and Service