Datasheet IRFP22N60K (Vishay) - 2
| Fabricante | Vishay |
| Descripción | Power MOSFET in TO-247AC package |
| Páginas / Página | 10 / 2 — IRFP22N60K. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| Formato / tamaño de archivo | PDF / 504 Kb |
| Idioma del documento | Inglés |
IRFP22N60K. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static
Línea de modelo para esta hoja de datos
Versión de texto del documento
IRFP22N60K
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.34
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA d - 0.30 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-source leakage IGSS VGS = ± 30 V - - ± 100 nA VDS = 600 V, VGS = 0 V - - 50 Zero gate voltage drain current IDSS μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 13 A b - 0.240 0.280 Ω Forward transconductance gfs VDS = 50 V, ID = 13 A b 11 - - S
Dynamic
Input capacitance Ciss V - 3570 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 350 - f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 36 - pF VDS = 1.0 V, f = 1.0 MHz - 4710 - Output capacitance Coss VGS = 0 V VDS = 480 V, f = 1.0 MHz - 92 - Effective output capacitance Coss eff. VDS = 0 V to 480 V - 180 - Total gate charge Qg - - 150 I Gate-source charge Qgs V D = 22 A, VDS = 480 V GS = 10 V - - 45 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 76 Turn-on delay time td(on) - 26 - VDD = 300 V, ID = 22 A, Rise time tr - 99 - Rg = 6.2, VGS = 10 V, ns Turn-off delay time td(off) see fig. 10 b - 48 - Fall time tf - 37 -
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 22 D showing the integral reverse A Pulsed diode forward current a I G SM - - 88 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 22 A, VGS = 0 V b - - 1.5 V TJ = 25 °C - 590 890 Body diode reverse recovery time trr ns TJ = 125 °C I - 670 1010 F = 22 A, dI/dt = 100 A/μs b TJ = 25 °C - 7.2 11 Body diode reverse recovery charge Qrr μC TJ =1 25 °C - 8.5 13 Reverse recovery current IRRM TJ = 25 °C - 26 39 Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S22-0046, Rev. C, 24-Jan-2021
2
Document Number: 91208 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.34
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA d - 0.30 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-source leakage IGSS VGS = ± 30 V - - ± 100 nA VDS = 600 V, VGS = 0 V - - 50 Zero gate voltage drain current IDSS μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 13 A b - 0.240 0.280 Ω Forward transconductance gfs VDS = 50 V, ID = 13 A b 11 - - S
Dynamic
Input capacitance Ciss V - 3570 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 350 - f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 36 - pF VDS = 1.0 V, f = 1.0 MHz - 4710 - Output capacitance Coss VGS = 0 V VDS = 480 V, f = 1.0 MHz - 92 - Effective output capacitance Coss eff. VDS = 0 V to 480 V - 180 - Total gate charge Qg - - 150 I Gate-source charge Qgs V D = 22 A, VDS = 480 V GS = 10 V - - 45 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 76 Turn-on delay time td(on) - 26 - VDD = 300 V, ID = 22 A, Rise time tr - 99 - Rg = 6.2, VGS = 10 V, ns Turn-off delay time td(off) see fig. 10 b - 48 - Fall time tf - 37 -
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 22 D showing the integral reverse A Pulsed diode forward current a I G SM - - 88 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 22 A, VGS = 0 V b - - 1.5 V TJ = 25 °C - 590 890 Body diode reverse recovery time trr ns TJ = 125 °C I - 670 1010 F = 22 A, dI/dt = 100 A/μs b TJ = 25 °C - 7.2 11 Body diode reverse recovery charge Qrr μC TJ =1 25 °C - 8.5 13 Reverse recovery current IRRM TJ = 25 °C - 26 39 Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S22-0046, Rev. C, 24-Jan-2021
2
Document Number: 91208 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000