Datasheet ADRF5030 (Analog Devices)

FabricanteAnalog Devices
Descripción100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch
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ADRF5030. FEATURES. FUNCTIONAL BLOCK DIAGRAM. Figure 1. Functional Block Diagram. GENERAL DESCRIPTION. APPLICATIONS. Rev. 0

Datasheet ADRF5030 Analog Devices

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ADRF5030
100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch
FEATURES FUNCTIONAL BLOCK DIAGRAM
► Wideband frequency range, 100 MHz to 20 GHz ► Non-reflective 50 Ω design ► Low insertion loss ► 0.7 dB typical between 0.1 GHz to 6 GHz ► 0.9 dB typical between 6 GHz to 12 GHz ► 1.2 dB typical up to 20 GHz ► High isolation ► 55 dB typical between 100 MHz to 6 GHz ► 50 dB typical between 6 GHz to 12 GHz ► 45 dB typical up to 20 GHz ► High input linearity ► P0.1dB: >36 dBm typical ► IP3: >60 dBm typical
Figure 1. Functional Block Diagram
► High RF power handling ► Through path: 36 dBm peak/33 dBm average
GENERAL DESCRIPTION
► Terminated path: 36 dBm peak/33 dBm average The ADRF5030 is a non-reflective, single-pole double-throw ► Hot switching: 36 dBm peak/33 dBm average (SPDT) switch manufactured using the silicon on insulator (SOI) ► CMOS/LVTTL compatible process. The ADRF5030 operates from 100 MHz to 20 GHz with ► No low-frequency spur; no negative voltage generator insertion loss of lower than 1.2 dB and isolation of higher than ► RF switching time: 70 ns 45 dB. The device has an RF input power handling capability of ► RF settling time (0.1 dB): 95 ns 33 dBm average/36 dBm peak for both RFC and RFx through paths, termination paths, and hot switching for both RFC and ► Single-supply operation capability (VDD = 3.3 V, VSS = 0 V) RFx ports. The ADRF5030 operates with dual-supply voltages ► 20-terminal, 3 mm × 3 mm, LGA package of ±3.3 V. The ADRF5030 employs complementary metal-oxide ► Pin compatible with ADRF5022 and ADRF5026 semiconductor (CMOS) and low-voltage transistor to transistor logic (LVTTL)-compatible control.
APPLICATIONS
The ADRF5030 can also operate with a single positive supply volt- ► Test instrumentation age (VDD) applied while the negative supply voltage (VSS) is tied to ► Military radios, radars, electronic counter measures (ECMs) ground. In this operating condition, the small signal performance is ► Microwave radios and very small aperture terminals (VSATs) maintained while the switching characteristics, linearity, and power handling performance are derated. See Table 2 for more details. The ADRF5030 is pin compatible with the ADRF5022 and ADRF5026, and also pin compatible with ADRF5031, a slow- switching, low cut-off version, which operates between 9 kHz to 20 GHz. The ADRF5030 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA). The ADRF5030 operates from −40°C to +105°C.
Rev. 0 DOCUMENT FEEDBACK
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
TECHNICAL SUPPORT
registered trademarks are the property of their respective owners. Document Outline Features Applications Functional Block Diagram General Description Specifications Single-Supply Operation Absolute Maximum Ratings Thermal Resistance Power Derating Curves Electrostatic Discharge (ESD) Ratings ESD Ratings for the ADRF5030 ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Insertion Loss, Return Loss, and Isolation Input Power Compression and Third-Order Intercept Theory of Operation RF Input and Output Power Supply Applications Information Recommendations for Printed Circuit Board Design Outline Dimensions Ordering Guide Notes