Datasheet MTP33N10E (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 33 Amps, 100 Volts |
| Páginas / Página | 8 / 6 — MTP33N10E. Figure 8. Gate−To−Source and Drain−To−Source. Figure 9. … |
| Formato / tamaño de archivo | PDF / 269 Kb |
| Idioma del documento | Inglés |
MTP33N10E. Figure 8. Gate−To−Source and Drain−To−Source. Figure 9. Resistive Switching Time. Voltage versus Total Charge
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MTP33N10E
14 140 V 1000 TS) DS V V DD = 50 V GS , DRAIN−T 12 120 ID = 33 A QT VGS = 10 V TAGE (VOL 10 100 TJ = 25°C O−SOURCE VOL Q2 (ns) tr 8 Q1 80 100 t, TIME 6 60 tf O−SOURCE VOL ID = 33 A T 4 T 40 AGE (VOL TE−T J = 25°C td(off) , GA 2 Q3 20 V GS VDS TS) td(on) 0 0 10 0 10 20 30 40 50 60 1 10 100 QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS)
Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS
33 30 VGS = 0 V 27 TJ = 25°C 24 (AMPS) 21 18 15 12 9 , SOURCE CURRENT IS 6 3 00.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.0 1.05 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define reliable operation, the stored energy from circuit inductance the maximum simultaneous drain−to−source voltage and dissipated in the transistor while in avalanche must be less drain current that a transistor can handle safely when it is than the rated limit and adjusted for operating conditions forward biased. Curves are based upon maximum peak differing from those specified. Although industry practice is junction temperature and a case temperature (TC) of 25°C. to rate in terms of energy, avalanche energy capability is not Peak repetitive pulsed power limits are determined by using a constant. The energy rating decreases non−linearly with an the thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction discussed in AN569, “Transient Thermal temperature. Resistance−General Data and Its Use.” Although many E−FETs can withstand the stress of Switching between the off−state and the on−state may drain−to−source avalanche at currents up to rated pulsed traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated (IDM) nor rated voltage (VDSS) is exceeded and the continuous current (ID), in accordance with industry transition time (tr,tf) do not exceed 10 μs. In addition the total custom. The energy rating must be derated for temperature power averaged over a complete switching cycle must not as shown in the accompanying graph (Figure 12). Maximum exceed (TJ(MAX) − TC)/(RθJC). energy at currents below rated continuous ID can safely be A Power MOSFET designated E−FET can be safely used assumed to equal the values indicated. in switching circuits with unclamped inductive loads. For
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14 140 V 1000 TS) DS V V DD = 50 V GS , DRAIN−T 12 120 ID = 33 A QT VGS = 10 V TAGE (VOL 10 100 TJ = 25°C O−SOURCE VOL Q2 (ns) tr 8 Q1 80 100 t, TIME 6 60 tf O−SOURCE VOL ID = 33 A T 4 T 40 AGE (VOL TE−T J = 25°C td(off) , GA 2 Q3 20 V GS VDS TS) td(on) 0 0 10 0 10 20 30 40 50 60 1 10 100 QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS)
Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS
33 30 VGS = 0 V 27 TJ = 25°C 24 (AMPS) 21 18 15 12 9 , SOURCE CURRENT IS 6 3 00.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.0 1.05 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define reliable operation, the stored energy from circuit inductance the maximum simultaneous drain−to−source voltage and dissipated in the transistor while in avalanche must be less drain current that a transistor can handle safely when it is than the rated limit and adjusted for operating conditions forward biased. Curves are based upon maximum peak differing from those specified. Although industry practice is junction temperature and a case temperature (TC) of 25°C. to rate in terms of energy, avalanche energy capability is not Peak repetitive pulsed power limits are determined by using a constant. The energy rating decreases non−linearly with an the thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction discussed in AN569, “Transient Thermal temperature. Resistance−General Data and Its Use.” Although many E−FETs can withstand the stress of Switching between the off−state and the on−state may drain−to−source avalanche at currents up to rated pulsed traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated (IDM) nor rated voltage (VDSS) is exceeded and the continuous current (ID), in accordance with industry transition time (tr,tf) do not exceed 10 μs. In addition the total custom. The energy rating must be derated for temperature power averaged over a complete switching cycle must not as shown in the accompanying graph (Figure 12). Maximum exceed (TJ(MAX) − TC)/(RθJC). energy at currents below rated continuous ID can safely be A Power MOSFET designated E−FET can be safely used assumed to equal the values indicated. in switching circuits with unclamped inductive loads. For
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