Datasheet MTP20N20E (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 20 Amps, 200 Volts |
| Páginas / Página | 9 / 4 — MTP20N20E. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| Formato / tamaño de archivo | PDF / 306 Kb |
| Idioma del documento | Inglés |
MTP20N20E. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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MTP20N20E TYPICAL ELECTRICAL CHARACTERISTICS
40 40 TJ = 25°C V V 8 V DS ≥ 10 V GS = 10 V TJ = −55°C 35 9 V 7 V 30 30 25°C (AMPS) (AMPS) 25 100°C 20 20 6 V 15 , DRAIN CURRENT , DRAIN CURRENT I D 10 I D 10 5 V 5 0 0 0 1 2 3 4 5 6 7 8 9 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.35 0.17 V T GS = 10 V J = 25°C 0.30 0.16 ANCE (OHMS) ANCE (OHMS) 0.15 0.25 TJ = 100°C 0.14 0.20 VGS = 10 V 0.13 O−SOURCE RESIST O−SOURCE RESIST 0.15 25°C 0.12 15 V , DRAIN−T 0.10 , DRAIN−T 0.11 − 55°C DS(on) 0.05 DS(on) 0.10 R R 0 4 8 12 16 20 24 28 32 36 40 0 4 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.4 10000 V V GS = 10 V GS = 0 V ANCE ID = 10 A 2.0 TJ = 125°C 1000 100°C 1.6 100 O−SOURCE RESIST 25°C 1.2 , LEAKAGE (nA) (NORMALIZED) I DSS , DRAIN−T 10 0.8 DS(on)R 0.4 1 −50 −25 0 25 50 75 100 125 150 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3
40 40 TJ = 25°C V V 8 V DS ≥ 10 V GS = 10 V TJ = −55°C 35 9 V 7 V 30 30 25°C (AMPS) (AMPS) 25 100°C 20 20 6 V 15 , DRAIN CURRENT , DRAIN CURRENT I D 10 I D 10 5 V 5 0 0 0 1 2 3 4 5 6 7 8 9 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.35 0.17 V T GS = 10 V J = 25°C 0.30 0.16 ANCE (OHMS) ANCE (OHMS) 0.15 0.25 TJ = 100°C 0.14 0.20 VGS = 10 V 0.13 O−SOURCE RESIST O−SOURCE RESIST 0.15 25°C 0.12 15 V , DRAIN−T 0.10 , DRAIN−T 0.11 − 55°C DS(on) 0.05 DS(on) 0.10 R R 0 4 8 12 16 20 24 28 32 36 40 0 4 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.4 10000 V V GS = 10 V GS = 0 V ANCE ID = 10 A 2.0 TJ = 125°C 1000 100°C 1.6 100 O−SOURCE RESIST 25°C 1.2 , LEAKAGE (nA) (NORMALIZED) I DSS , DRAIN−T 10 0.8 DS(on)R 0.4 1 −50 −25 0 25 50 75 100 125 150 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3