Datasheet ZXRE125 (Diodes) - 2

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Diodes Incorporated
ZXRE125 Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated) Parameter Symbol Rating Unit
Reverse Current VZ 30 mA Forward Current 10 mA Operating Temperature TOMP -40 to 85 °C Storage Temperature TSTG -55 to 125 °C Power Dissipation (TAMB = 25°C) PD 330 mW
Electrical Characteristics (Test conditions: Tamb = 25°C, unless otherwise specified.) Symbol Parameter Condition Min. Typ. Max. Tol. (%) Unit
1.214 1.220 1.226 C/0.5(1) 1.208 1.220 1.232 D/1 VR Reverse breakdown voltage IR = 100µA V 1.196 1.220 1.244 E/2 1.183 1.220 1.257 F/3 IMIN Minimum operating current 4 8 µA IR Recommended operating current 0.008 20 mA (*) Average reverse breakdown TC I ppm/°C voltage temperature coefficient R(min) to IR(max) 20 75 ΔVR Reverse Breakdown Change IR = 30μA to 1mA 1 mV ΔIR with Current Voltage IR = 1mA to 12mA 10 I R = 1mA Z Ω R Reverse dynamic impedance f = 100Hz 0.2 0.6 IAC = 0.1IR I E R = 8µA to 100µA N Wideband noise voltage 60 µV(rms) f = 10Hz to 10kHz Notes: 1. (V (*) R(MAX) – VR(MIN)) x 1000000 TC = VR x (T(MAX) – T(MIN)) Note: VR(MAX) - VR(MIN) is the maximum deviation in reference voltage measured over the full operating temperature range. ZXRE125 2 of 5 June 2010 Document number: DS32170 Rev. 8 - 2
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