Datasheet BD234G, BD237G (ON Semiconductor)

link to page 4 link to page 4
DATA SHEET www.onsemi.com
Plastic Medium Power Bipolar Transistors
2.0 AMPERES POWER TRANSISTORS
BD237G (NPN),
25 WATTS
BD234G (PNP)
PNP NPN
Designed for use in 5.0 to 10 W audio amplifiers and drivers COLLECTOR COLLECTOR utilizing complementary or quasi complementary circuits. 2, 4 2, 4
Features
• High DC Current Gain 3 3 BASE BASE • Epoxy Meets UL 94 V0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* 1 1 EMITTER EMITTER
MAXIMUM RATINGS Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc BD234G 45
TO−225
DB237G, BD238G 80
CASE 77−09
Collector−Base Voltage V
STYLE 1
CBO Vdc BD234G 60 DB237G, BD238G 100 1 2 3 Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc
MARKING DIAGRAM
Base Current IB 1.0 Adc Total Device Dissipation PD W @ T YWW C = 25_C 25 BD23xG Operating and Storage Junction TJ, Tstg – 55 to + 150 _C Temperature Range ESD − Human Body Model HBM 3B V Y = Year ESD − Machine Model MM C V WW = Work Week BD23x = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x = 4, 7 or 8 device. If any of these limits are exceeded, device functionality should not be G = Pb−Free Package assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit
See detailed ordering and shipping information in the package dimensions section on page 4 of this data Thermal Resistance, Junction−to−Case RqJC 5.0 _C/W sheet. NOTE: Some of the devices on this data sheet have been
DISCONTINUED
. Please refer to the table on page 4. *For additional information on our Pb−Free strategy and soldering details, please download the
onsemi
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2024 − Rev. 19 BD237/D