Datasheet BC638 (ON Semiconductor) - 3

BC638 TYPICAL PERFORMANCE CHARACTERISTICS
−500 1000 IB = − 1.8 mA VCE = − 2V IB = − 1.6 mA −400 IB = − 1.4 mA IB = − 1.2 mA −300 IB = − 1.0 mA IB = − 0.8 mA 100 OR CURRENT [mA] −200 IB = − 0.6 mA IB = − 0.4 mA , DC CURRENT GAIN FE −100 IB = − 0.2 mA h , COLLECT I C 0 10 0 −10 −20 −30 −40 −50 −1 −10 −100 −1000 V I CE, COLLECTOR−EMITTER VOLTAGE [V] C, COLLECTOR CURRENT [mA]
Figure 1. Static Characteristic Figure 2. DC Current Gain
−10 −1000 IC = 10 IB VCE = − 2V AGE [V] T −1 VBE(sat) −100 TION VOL TURA OR CURRENT [mA] −0.1 −10 VCE(sat) (sat), SA CE , COLLECT I C −0.01 −1 (sat), V −1 −10 −100 −1000 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 BEV IC, COLLECTOR CURRENT [mA] VBE, BASE−EMITTER VOLTAGE [V]
Figure 3. Base−Emitter Saturation Voltage and Figure 4. Base−Emitter On Voltage Collector−Emitter Saturation Voltage
100 f=1MHz ANCE [pF] 10 ACIT , CAP obC 1 −1 −10 −100 VCB, COLLECTOR−BASE VOLTAGE [V]
Figure 5. Collector Output Capacitance www.onsemi.com 3