Datasheet BC638 (ON Semiconductor) - 2

BC638 ELECTRICAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −60 V ICBO Collector Cut−Off Current VCB = −30 V, IE = 0 −0.1 mA IEBO Emitter Cut−Off Current VEB = −5 V, IC = 0 −10 mA hFE1 DC Current Gain VCE = −2 V, IC = −5 mA 25 hFE2 VCE = −2 V, IC = −150 mA 40 160 hFE3 VCE = −2 V, IC = −500 mA 25 VCE(sat) Collector−Emitter Saturation Voltage IC = −500 mA, IB = −50 mA −0.5 V VBE(on) Base−Emitter On Voltage VCE = −2 V, IC = −500 mA −1 V fT Current Gain Bandwidth Product VCE = −5 V, IC = −10 mA, f = 50 MHz 100 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION Part Number Top Mark Package Shipping
BC638TA BC638 TO−92−3, case 135AR (Pb−Free) 2,000 Units / Fan Fold
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