Datasheet P2503NPG (Niko Semiconductor) - 3

P2503NPG NIKO-SEM N- & P-Channel Enhancement Mode DIP-8 Field Effect Transistor Halogen-Free & Lead-Free
N-Ch 16 N-Channel Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch 14 ID = 7A N-Ch 2.5 Gate-Source Charge2 Qgs P-Channel P-Ch 2.2 nC VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 2.1 Gate-Drain Charge2 Qgd I D = -5A P-Ch 1.9 N-Ch 2.2 4.4 Turn-On Delay Time2 t N-Channel d(on) P-Ch 6.7 13.4 VDD = 10V N-Ch 7.5 15 Rise Time2 tr ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Ch 9.7 19.4 N-Ch 11.8 21.3 Turn-Off Delay Time2 t P-Channel nS d(off) P-Ch 19.8 35.6 VDD = -10V N-Ch 3.7 7.4 Fall Time2 tf ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 12.3 22.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25
°
C)
N-Ch 1.3 Continuous Current IS P-Ch -1.3 A N-Ch 2.6 Pulsed Current3 ISM P-Ch -2.6 IF = 7A, VGS = 0V N-Ch 1 Forward Voltage1 VSD V P-Ch -1 IF = -5A, VGS = 0V 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2503NPG”, DATE CODE or LOT # REV 1.2
3 Feb-09-2010