mm - 360 V PDP Trench IGBTElectrical Characteristics of the IGBT TC = 25°C unless otherwise noted SymbolParameterTest ConditionsMin.Typ.Max.UnitOff Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250
A 360 - - V BVCES Temperature Coefficient of Breakdown V T GE = 0V, IC = 250
A - 0.4 - V/oC J Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0
V - - 100 A IGES G-E Leakage Current VGE = VGES, VCE = 0
V - - ±400 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250
A, VCE = VGE 2.4 3.3 4.0 V IC = 20
A, VGE = 15
V - 1.19 - V I V C = 30
A, VGE = 15
V - 1.33 - V CE(sat) Collector to Emitter Saturation Voltage IC = 50