Datasheet FAN7318A (Fairchild) - 8

FA N 7318A Electrical Characteristics
(Continued) For typical values, TA=25°C, VIN=15V, and -25°C ≤ TA ≤ 85°C, unless otherwise specified. Specifications to -25°C ~ 85°C are guaranteed by design based on final characterization results.
— LC Symbol Parameter Test Conditions Min. Typ. Max. Unit Protection Section D B
Volp0 Open-Lamp Protection Voltage 0(4) Striking 0.65 0.70 0.75 V
a
Volp1 Open-Lamp Protection Voltage 1 Sweep OLP 0.42 0.49 0.56 V
cklight
Vcmpr CMP-High Protection Voltage Sweep CMP 3.40 3.50 3.60 V Vslp Short-Lamp Protection Voltage Sweep TIMER 0.22 0.30 0.38 V
Invert
Vtmr1 Timer Threshold Voltage 1 Striking, Sweep TIMER 2.87 3.02 3.17 V Vtmr2 Timer Threshold Voltage 2 Sweep TIMER 1.00 1.10 1.20 V Itmr1 Timer Current 1 OLP=0V 1.7 2.1 2.5 µA
e r D
Itmr2 Timer Current 2 OLR=1.8V 40 50 60 µA
r
TSD Thermal Shutdown(4) 150
ive IC
°C Vovp Over-Voltage Protection Voltage Sweep OLR 1.24 1.34 1.44 V ENA2.3V OLP Disable/Enable Change dcr 2.1 2.3 2.5 V Voltage
Output Section
Vpdhv PMOS Gate High Voltage(4) VIN=15V VIN V Vpdlv PMOS Gate Low Voltage VIN=15V VIN-9.0 VIN-7.5 VIN-6.5 V Vndhv NMOS Gate High Voltage VIN=15V 7.5 8.5 10.0 V Vndlv NMOS Gate Low Voltage(4) VIN=15V 0 V PMOS Gate Voltage with UVLO Vpuv V Activated IN=4.5V VIN-0.3 V NMOS Gate Voltage with UVLO Vnuv V Activated IN=4.5V 0.3 V Ipdsur PMOS Gate Drive Source Current(4) VIN=15V -300 mA Ipdsin PMOS Gate Drive Sink Current(4) VIN=15V 400 mA Indsur NMOS Gate Drive Source Current(4) VIN=15V 300 mA Indsin NMOS Gate Drive Sink Current(4) VIN=15V -400 mA
Maximum / Minimum Duty Cycle
DCMIN Minimum Duty Cycle(4) fosc=100kHz 0 % DCMAX Maximum Duty Cycle(4) fosc=100kHz 45 49 %
Note:
4. These parameters, although guaranteed, are not 100% tested in production. © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN7318A • 1.0.0 8