Datasheet DLD101 (Diodes) - 4

DLD101 Q1 Typical Performance Curves
10 ) 10 Ω 9 V = V DS GS E ( C 8 AN T ) S 7 (A T ESI R EN 6 T = 150°C N- A R O R E U 5 1 C C R V = 6V GS U T N 4 T = 125°C AI A O R S N- V = 10V GS UC D 3 I, D AI T = 85°C A R 2 T = 25°C , D A N) 1 T = -55°C (O A DSR 0 0.1 1.5 2 2.5 3 3.5 4 4.5 0 0.4 0.8 1.2 1.6 V , GATE-SOURCE VOLTAGE (V) I , DRAIN CURRENT (A) GS D Fig. 5 Typical On-Resistance NEW PROD Fig. 4 Typical Transfer Characteristic vs. Drain Current and Gate Voltage ) 1.6 Ω 3.0 E ( C 1.4 V = 10V GS 2.5 AN T 1.2 IS IZED) L ES A R T = 150°C M 2.0 1.0 A R N- OURCE O V = 10V O T = 125°C A S N GS E I = 1.5A D 0.8 IN- C 1.5 R T = 85°C U A V = 6V O , DRA ANCE ( GS 0.6 S N I = 1A O ST D N- T = 25°C 1.0 A DS AI ESI 0.4 R R -R N , D T = -55°C A O 0.5 N) 0.2 (O DSR 0 0 0 0.4 0.8 1.2 1.6 -50 -25 0 25 50 75 100 125 150 I , DRAIN CURRENT (A) T , AMBIENT TEMPERATURE (°C) D A Fig. 6 Typical On-Resistance Fig. 7 On-Resistance Variation with Temperature vs. Drain Current and Temperature 1.5 4.0 ) 3.8 V ( E 1.2 3.6 AG E T L C ) Ω 3.4 R U O 0.9 D VO 3.2 S V = 6V L GS N- ANCE ( I = 1A T D I = 1mA AI D S SHO 3.0 R , D ESI 0.6 HRE 2.8 I = 250µA D N -R T O N V = 10V DS O GS TE 2.6 R I = 1.5A A D 0.3 , G ) 2.4 H (T GS 2.2 V 0 2.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) T , AMBIENT TEMPERATURE (°C) A A Fig. 8 On-Resistance Variation with Temperature Fig. 9 Gate Threshold Variation vs. Ambient Temperature DLD101 4 of 9 April 2010 Document number: DS32007 Rev. 8 - 2
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