Datasheet IRFF330, JANTX2N6800, JANTXV2N6800 (Infineon) - 2

IRFF330 JANTX2N6800/JANTXV2N6800 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, ID = 1.0mA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.37 ––– V/°C Reference to 25°C, ID = 1.0mA ––– ––– 1.0 V R GS = 10V, ID2 = 2.0A  DS(on) Static Drain-to-Source On-Resistance  ––– ––– 1.10 VGS = 10V, ID1 = 3.0A  VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA   Gfs Forward Transconductance 2.0 ––– ––– S VDS = 15V, ID2 = 2.0A  IDSS ––– ––– 25 V Zero Gate Voltage Drain Current µA DS =320 V, VGS = 0V ––– ––– 250 VDS = 320V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Leakage Forward ––– ––– 100 V nA GS = 20V Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V QG Total Gate Charge 19.1 ––– 34.75 ID1 = 3.0A QGS Gate-to-Source Charge 1.0 ––– 5.75 nC   VDS = 200V QGD Gate-to-Drain (‘Miller’) Charge 6.7 ––– 16.59 VGS = 10V td(on) Turn-On Delay Time ––– ––– 30 VDD = 200V tr Rise Time ––– ––– 35 I ns D1 = 3.0A td(off) Turn-Off Delay Time ––– ––– 55 RG = 7.5 tf Fall Time ––– ––– 35 VGS = 10V Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 Ls +LD Total Inductance ––– 7.0 ––– nH   in from package) with Source wire internally bonded from Source pin to Drain pin Ciss Input Capacitance ––– 620 ––– VGS = 0V Coss Output Capacitance ––– 200 ––– pF   VDS = 25V Crss Reverse Transfer Capacitance ––– 75 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 3.0 A   ISM Pulsed Source Current (Body Diode)  ––– ––– 12 VSD Diode Forward Voltage ––– ––– 1.4 V TJ = 25°C,IS = 3.0A, VGS = 0V trr Reverse Recovery Time ––– ––– 700 ns TJ = 25°C, IF = 3.0A, VDD ≤ 50V Qrr Reverse Recovery Charge ––– ––– 6.2 µC di/dt = 100A/µs  ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
 
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 5.0 °C/W RJA Junction-to-Ambient (Typical Socket Mount) ––– ––– 175  
Footnotes:
 Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25°C, L = 42.5mH, Peak IL = 3.0A, VGS = 10V, RG = 25 Ω  ISD  3.0A, di/dt  90A/µs, VDD  400V, TJ  150°C, Suggested RG = 7.5 Ω  Pulse width  300 µs; Duty Cycle  2% 2 International Rectifier HiRel Products, Inc. 2018-11-20