Datasheet 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 (Vishay) - 4
| Fabricante | Vishay |
| Descripción | N-Channel JFETs |
| Páginas / Página | 7 / 4 — 2N/SST5484 Series. Vishay Siliconix. Drain Current and Transconductance. … |
| Formato / tamaño de archivo | PDF / 67 Kb |
| Idioma del documento | Inglés |
2N/SST5484 Series. Vishay Siliconix. Drain Current and Transconductance. On-Resistance and Output Conductance
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2N/SST5484 Series Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
10 20 100 500 g rDS @ ID = 1 mA, VGS = 0 V fs Ω ) – gos @ VDS = 10 V, VGS = 0 V gos IDSS 8 Forward T f = 1 kHz 16 80 400 – Output Conductance ( ransconductance (mS) r 6 DS 12 g 60 fs 300 gos 4 8 40 200 Saturation Drain Current (mA) µ Drain-Source On-Resistance ( S) – S I – DSS @ VDS = 10 V, VGS = 0 V 2 4 20 100 I DS gfs @ VDS = 10 V, VGS = 0 V (on) f = 1 kHz r DS 0 0 0 0 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V)
Common-Source Forward Gate Leakage Current Transconductance vs. Drain Current
100 nA 10 ID = 5 mA VGS(off) = –3 V VDS = 10 V f = 1 kHz 10 nA 1 mA 8 0.1 mA 1 nA TA = 125_C TA = –55_C 6 100 pA IGSS @ ID = 5 mA 125_C 25_C ransconductance (mS) 4 Gate Leakage – 1 mA 10 pA I G 125_C 0.1 mA T Forward T A = 25_C 2 1 pA – I fs GSS @ 25_C g 0.1 pA 0 0 4 8 12 16 20 0.1 1 10 VDG – Drain-Gate Voltage (V) ID – Drain Current (mA)
Output Characteristics Output Characteristics
10 15 VGS(off) = –2 V VGS(off) = –3 V 8 12 VGS = 0 V VGS = 0 V –0.2 V –0.3 V 6 9 –0.4 V –0.6 V –0.9 V 4 –0.6 V 6 Drain Current (mA) Drain Current (mA) – – –1.2 V –0.8 V I D I D –1.0 V –1.5 V 2 3 –1.2 V –1.8 V 0 –1.4 V 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) www.vishay.com Document Number: 70246
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S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
10 20 100 500 g rDS @ ID = 1 mA, VGS = 0 V fs Ω ) – gos @ VDS = 10 V, VGS = 0 V gos IDSS 8 Forward T f = 1 kHz 16 80 400 – Output Conductance ( ransconductance (mS) r 6 DS 12 g 60 fs 300 gos 4 8 40 200 Saturation Drain Current (mA) µ Drain-Source On-Resistance ( S) – S I – DSS @ VDS = 10 V, VGS = 0 V 2 4 20 100 I DS gfs @ VDS = 10 V, VGS = 0 V (on) f = 1 kHz r DS 0 0 0 0 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V)
Common-Source Forward Gate Leakage Current Transconductance vs. Drain Current
100 nA 10 ID = 5 mA VGS(off) = –3 V VDS = 10 V f = 1 kHz 10 nA 1 mA 8 0.1 mA 1 nA TA = 125_C TA = –55_C 6 100 pA IGSS @ ID = 5 mA 125_C 25_C ransconductance (mS) 4 Gate Leakage – 1 mA 10 pA I G 125_C 0.1 mA T Forward T A = 25_C 2 1 pA – I fs GSS @ 25_C g 0.1 pA 0 0 4 8 12 16 20 0.1 1 10 VDG – Drain-Gate Voltage (V) ID – Drain Current (mA)
Output Characteristics Output Characteristics
10 15 VGS(off) = –2 V VGS(off) = –3 V 8 12 VGS = 0 V VGS = 0 V –0.2 V –0.3 V 6 9 –0.4 V –0.6 V –0.9 V 4 –0.6 V 6 Drain Current (mA) Drain Current (mA) – – –1.2 V –0.8 V I D I D –1.0 V –1.5 V 2 3 –1.2 V –1.8 V 0 –1.4 V 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) www.vishay.com Document Number: 70246
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S-04028—Rev. E, 04-Jun-01