Datasheet IRF2804, IRF2804S, IRF2804L (International Rectifier) - 6
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 12 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 14. Fig 13b |
| Formato / tamaño de archivo | PDF / 292 Kb |
| Idioma del documento | Inglés |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 14. Fig 13b
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IRF2804/S/L 15V 1600 ) J ID m( TOP 31A y 53A L DRIVER g VDS r BOTTOM 75A e 1200 n E e R h G D.U.T + c V n - DD I a AS A l a 20V V 800 GS v t 0.01Ω A p e sl u P e
Fig 12a.
Unclamped Inductive Test Circuit l 400 g ni S V , (BR)DSS S A tp E 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) IAS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms vs. Drain Current QG 10 V QGS QGD 4.0 VG ) V( egatl I o D = 250µA Charge V 3.0 dl o
Fig 13a.
Basic Gate Charge Waveform h s erht Current Regulator et Same Type as D.U.T. a 2.0 G )ht 50KΩ ( S .2µF 12V G .3µF V +V D.U.T. DS - 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 VGS TJ , Temperature ( °C ) 3mA I I G D Current Sampling Resistors
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit l 400 g ni S V , (BR)DSS S A tp E 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) IAS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms vs. Drain Current QG 10 V QGS QGD 4.0 VG ) V( egatl I o D = 250µA Charge V 3.0 dl o
Fig 13a.
Basic Gate Charge Waveform h s erht Current Regulator et Same Type as D.U.T. a 2.0 G )ht 50KΩ ( S .2µF 12V G .3µF V +V D.U.T. DS - 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 VGS TJ , Temperature ( °C ) 3mA I I G D Current Sampling Resistors
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com