Datasheet MMBT2369A (ON Semiconductor) - 6

FabricanteON Semiconductor
DescripciónNPN Switching Transistor
Páginas / Página8 / 6 — MMBT23. Typical Performance Characteristics. 69A. — NPN Sw. I = 100 mA. I …
Formato / tamaño de archivoPDF / 610 Kb
Idioma del documentoInglés

MMBT23. Typical Performance Characteristics. 69A. — NPN Sw. I = 100 mA. I = 10 mA. 3.0 ns. 4.0 ns. V = 3.0 V. R R. t = 8.0 ns. t = 2.0 ns

MMBT23 Typical Performance Characteristics 69A — NPN Sw I = 100 mA I = 10 mA 3.0 ns 4.0 ns V = 3.0 V R R t = 8.0 ns t = 2.0 ns

Línea de modelo para esta hoja de datos

Versión de texto del documento

MMBT23 Typical Performance Characteristics
(Continued)
69A ) — NPN Sw ) (V
-30
mA E
-6
( I = 100 mA G I = 10 mA C 3.0 ns A C NT 4.0 ns
-25
V = 3.0 V E V = 3.0 V CC LT
-5
CC R R VO t = 8.0 ns d U
-20
F
-4
F C t = 2.0 ns E f 8.0 ns O S 5.0 ns itching T
-15
A
-3
4.0 ns B F ITTER
-10
12.0 ns M
-2
OF -E N R 3.0 ns
-5
SE U
-1
A - T B ) r -
0
ansistor (O
0
I B2
0 5 10 15 20 25 30
BE
1 2 5 10 20 50
I V B1 - TURN ON BASE CURRENT (mA) I B1 - TURN ON BASE CURRENT (mA) Figure 13. Fall Time vs. Figure 14. Delay Time vs. Base-Emitter Off Voltage Turn-On and Turn-Off Base Currents and Turn-On Base Current ) A m
50 500
) ( T V = 3.0 V CC W N m E (
400
R N TO-92
10
R t = 2.0 ns r IO U T C PA
300
E S 5.0 ns A ISSI B
1
D
200
N ER SOT-23 O 20 ns N 10 ns W R
100
U PO - - T D
0
P B1
0 1 10 100 500
I
0 25 50 75 100 125 150
I - C COLLE CTOR CURRENT (mA) TE MPE RATURE ( C) ° Figure 15. Rise Time vs. Turn-On Base Current and Figure 16. Power Dissipation vs. Collector Current Ambient Temperature
www.onsemi.com 5