Datasheet MMBT2369A (ON Semiconductor) - 3

MMBT23 Thermal Characteristics
(3) Values are at TA = 25°C unless otherwise noted.
69A Symbol Parameter Value Unit
Total Device Dissipation 225 mW
— NPN Sw
PD Derate Above 25°C 1.8 mW/°C RqJA Thermal Resistance, Junction-to-Ambient 556 °C/W
Note:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
itching T Electrical Characteristics r
Values are at T
ansistor
A = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
Collector-Emitter Breakdown BVCEO Voltage(4) IC = 10 mA, IB = 0 15 V BVCES Collector-Emitter Breakdown Voltage IC = 10 μA, VBE = 0 40 V BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 4.5 V VCB = 20 V, IE = 0 0.4 ICBO Collector Cut-Off Current μA VCB = 20 V, IE = 0, TA = 125°C 30 IC = 10 mA, VCE = 1.0 V 40 120 hFE DC Current Gain(4) IC = 10 mA, VCE = 0.35 V, TA = -55°C 20 IC = 100 mA, VCE = 1.0 V 20 IC = 10 mA, IB = 1.0 mA 0.20 Collector-Emitter Saturation IC = 10 mA, IB = 1.0 mA, TA = 125°C 0.30 VCE(sat) V Voltage(4) IC = 30 mA, IB = 3.0 mA 0.25 IC = 100 mA, IB = 10 mA 0.50 IC = 10 mA, IB = 1.0 mA 0.70 0.85 IC = 10 mA, IB = 1.0 mA, TA = -55°C 1.02 VBE(sat) Base-Emitter Saturation Voltage I V C = 10 mA, IB = 1.0 mA, TA = 125°C 0.59 IC = 30 mA, IB = 3.0 mA 1.15 IC = 100 mA, IB = 10 mA 1.60 Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF I h C = 10 mA, VCE = 10 V fe Small-Signal Current Gain 5.0 RG = 2.0 kΩ, f = 100 MHz ts Storage Time IB1 = IB2 = IC = 10 mA 13 ns V t CC = 3.0 V, IC = 10 mA, on Turn-On Time 12 ns IB1 = 3.0 mA V t CC = 3.0 V, IC = 10 mA, off Turn-Off Time 18 ns IB1 = 3.0 mA, IB2 = 1.5 mA
Note:
4. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2% www.onsemi.com 2