Datasheet 2N7077 (Inchange Semiconductor) - 2

isc N-Channel MOSFET Transistor 2N7077 ELECTRICAL CHARACTERISTICS
（
TC=25
℃
unless otherwise specified
）
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 400 -- -- V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2.0 -- 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=9.5A -- -- 0.3 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -- -- ±100 nA IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 -- -- 25 uA VSD Forward On-Voltage IS=15A; VGS= 0 0.85 -- 1.4 V
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2 Document Outline FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise