Datasheet ZTX788B (Diodes) - 3
| Fabricante | Diodes |
| Descripción | PNP Silicon Planar Medium Power High Gain Transistor |
| Páginas / Página | 3 / 3 — TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) … |
| Formato / tamaño de archivo | PDF / 67 Kb |
| Idioma del documento | Inglés |
TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) v IC. Safe Operating Area
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ZTX788B
TYPICAL CHARACTERISTICS
1.8 1.8 IC/IB=200 Tamb=25°C -55°C IC/IB=200 1.6 +25°C IC/IB=100 1.6 +100°C IC/IB=10 +175°C 1.4 1.4 1.2 1.2 olts) olts) 1.0 1.0 - (V - (V ) t ) 0.8 a at 0.8 (s s( E 0.6 C CE 0.6 V V 0.4 0.4 0.2 0.2 0 0 0.01 0.1 1 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC VCE(sat) v IC
+100°C -55°C VCE=2V IC/IB=200 1.6 +25°C 1200 1.6 +25°C -55°C +100°C 1.4 1.4 +175°C 1.2 900 1.2 olts) 1.0 cal Gaini 1.0 - (V 0.8 600 yp ) t 0.8 a (s 0.6 - T E 0.6 F BE 0.4 h 300 V 0.4 - Normalised Gain E 0.2 F 0.2 h 0 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC VBE(sat) v IC
Single Pulse Test at Tamb=25°C 10 -55°C VCE=2V +25°C 1.6 +100°C 1.4 1 1.2 olts) D.C. 1.0 1s 100ms - (V 0.8 10ms E B 1.0ms 0.6 0.1ms V 0.1 0.4 0.2 - Collector Current (Amps) CI 0 0 0.01 0.1 1 10 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
VBE(on) v IC Safe Operating Area
3-275
TYPICAL CHARACTERISTICS
1.8 1.8 IC/IB=200 Tamb=25°C -55°C IC/IB=200 1.6 +25°C IC/IB=100 1.6 +100°C IC/IB=10 +175°C 1.4 1.4 1.2 1.2 olts) olts) 1.0 1.0 - (V - (V ) t ) 0.8 a at 0.8 (s s( E 0.6 C CE 0.6 V V 0.4 0.4 0.2 0.2 0 0 0.01 0.1 1 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC VCE(sat) v IC
+100°C -55°C VCE=2V IC/IB=200 1.6 +25°C 1200 1.6 +25°C -55°C +100°C 1.4 1.4 +175°C 1.2 900 1.2 olts) 1.0 cal Gaini 1.0 - (V 0.8 600 yp ) t 0.8 a (s 0.6 - T E 0.6 F BE 0.4 h 300 V 0.4 - Normalised Gain E 0.2 F 0.2 h 0 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC VBE(sat) v IC
Single Pulse Test at Tamb=25°C 10 -55°C VCE=2V +25°C 1.6 +100°C 1.4 1 1.2 olts) D.C. 1.0 1s 100ms - (V 0.8 10ms E B 1.0ms 0.6 0.1ms V 0.1 0.4 0.2 - Collector Current (Amps) CI 0 0 0.01 0.1 1 10 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
VBE(on) v IC Safe Operating Area
3-275