Datasheet ZTX690B (Diodes) - 3

FabricanteDiodes
DescripciónNPN Silicon Planar Medium Power High Gain Transistor
Páginas / Página3 / 3 — TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) …
Formato / tamaño de archivoPDF / 71 Kb
Idioma del documentoInglés

TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) v IC. Safe Operating Area

TYPICAL CHARACTERISTICS VCE(sat) v IC hFE v IC VBE(sat) v IC VBE(on) v IC Safe Operating Area

Línea de modelo para esta hoja de datos

Versión de texto del documento

ZTX690B
TYPICAL CHARACTERISTICS
IC/IB=200 Tamb=25°C -55°C 0.8 +25°C IC/IB=100 IC/IB=100 0.8 +100°C IC/IB=10 +175°C 0.6 olts) olts) 0.6 - (V - (V ) t )t a 0.4 a 0.4 (s (s E E C C V 0.2 V 0.2 0 0 0.01 0.1 1 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC VCE(sat) v IC
+100°C VCE=2V 1.6 +25°C -55°C +25°C IC/IB=100 -55°C 1.5K 1.6 +100°C 1.4 +175°C 1.4 ) 1.2 lts 1.2 o 1.0 1K V ( 1.0 0.8 - )ta 0.8 0.6 ypical Gain (s E 500 - T 0.6 B 0.4 - Normalised Gain E F V 0.4 E h F 0.2 h 0.2 0 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC VBE(sat) v IC
Single Pulse Test at Tamb=25°C 10 -55°C VCE=2V +25°C 1.6 +100°C ps) +175°C 1.4 Am ( 1 1.2 nt olts) er D.C. 1.0 1s - (V 100ms E 0.8 Curr B 10ms V to 1.0ms 0.6 c 0.1ms le 0.1 l 0.4 Co 0.2 - C I 0 0 0.01 0.1 1 10 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
VBE(on) v IC Safe Operating Area
3-240