Datasheet D44VH10, D45VH10 (ON Semiconductor) - 4

D44VH10 (NPN), D45VH10 (PNP)
1.2 1.4 VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TS) −40°C TS) 1.2 1.0 −40°C 1.0 0.8 125°C AGE (VOL AGE (VOL T T 0.8 125°C 0.6 25°C 0.6 25°C TION VOL 0.4 TION VOL 0.4 TURA 0.2 TURA 0.2 SA SA 0 0 0.1 1 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. D44VH10 ON−Voltage Figure 8. D45VH10 ON−Voltage
100 T T A C 50 30 TTS) A 20 1.0 ms 100 ms 3.0 60 10 10 ms TION (W 5.0 A 3.0 2.0 40 2.0 OR CURRENT (AMPS) TC ≤ 70° C dc 1.0 ms T 1.0 DUTY CYCLE ≤ 50% C 0.5 1.0 20 TA 0.3 D44H/45H8 , COLLECT , POWER DISSIP 0.2 I C D44H/45H10,11 DP 0.1 0 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 20 40 60 80 100 120 140 160 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C)
Figure 9. Maximum Rated Forward Bias Figure 10. Power Derating Safe Operating Area
1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 THERMAL 0.1 0.1 P Zq (pk) JC(t) = r(t) RqJC 0.07 0.05 RqJC = 1.56°C/W MAX ANCE (NORMALIZED) 0.05 D CURVES APPLY FOR POWER 0.02 , TRANSIENT PULSE TRAIN SHOWN t1 0.03 r(t) READ TIME AT t1 t RESIST 2 0.02 T 0.01 J(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms)
Figure 11. Thermal Response www.onsemi.com 4