Datasheet SI2302DS (Nexperia) - 7

Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor
03ae95 03ae93 10 10 I I D 4.5 V 3 V 2.5 V D VDS > ID x RDSon (A) (A) 8 8 2 V 6 6 4 4 2 VGS = 1.5V 2 Tj = 150 ºC 25 ºC 0 0 0 0.5 1 1.5 V 0 1 2 3 DS V (V) GS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values. function of gate-source voltage; typical values.
03ae94 03ad57 0.1 2 RDSon Tj = 25 ºC VGS = 2.5 V a (Ω) 0.09 1.6 0.08 1.2 3 V 0.07 0.8 0.06 4.5 V 0.4 0.05 0 0 2 4 6 8 10 -60 0 60 120 180 ID (A) Tj (ºC) Tj = 25 °C R a DSon = -------------- RDSon 25 C ° ( )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance of drain current; typical values. factor as a function of junction temperature.
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 6 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers