Datasheet BC817 (Nexperia) - 7
| Fabricante | Nexperia |
| Descripción | 45 V, 500 mA NPN General-Purpose Transistors |
| Páginas / Página | 13 / 7 — Nexperia. BC817 series. 45 V, 500 mA NPN general-purpose transistors. … |
| Revisión | 30062022 |
| Formato / tamaño de archivo | PDF / 316 Kb |
| Idioma del documento | Inglés |
Nexperia. BC817 series. 45 V, 500 mA NPN general-purpose transistors. Fig. 8. BC817-25: DC current gain as a function of
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Nexperia BC817 series 45 V, 500 mA NPN general-purpose transistors
006aaa132 600 006aaa135 10 hFE (1) VBEsat (V) 400 (2) 1 (1) (2) 200 (3) (3) 0 10- 1 10- 1 103 102 1 10 10- 1 103 102 1 10 IC (mA) IC (mA) VCE = 1 V IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C
Fig. 8. BC817-25: DC current gain as a function of Fig. 9. BC817-25: Base-emitter saturation voltage as a collector current; typical values function of collector current; typical values
006aaa138 1 006aaa141 1.2 V (6) (5) (4) (3) (2) (1) CEsat IC (V) (A) 10- 1 0.8 (7) (8) (1) (9) (2) 10- 2 (3) 0.4 (10) 10- 3 0 10- 1 103 102 1 10 0 1 2 3 4 5 IC (mA) VCE (V) IC/IB = 10 Tamb = 25 °C (1) Tamb = 150 °C (1) IB = 13.0 mA (2) Tamb = 25 °C (2) IB = 11.7 mA (3) Tamb = -55 °C (3) IB = 10.4 mA
Fig. 10. BC817-25: Collector-emitter saturation voltage
(4) IB = 9.1 mA
as a function of collector current; typical values
(5) IB = 7.8 mA (6) IB = 6.5 mA (7) IB = 5.2 mA (8) IB = 3.9 mA (9) IB = 2.6 mA (10) IB = 1.3 mA
Fig. 11. BC817-25: Collector current as a function of collector-emitter voltage; typical values
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet Rev. 8 — 1 July 2022 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
006aaa132 600 006aaa135 10 hFE (1) VBEsat (V) 400 (2) 1 (1) (2) 200 (3) (3) 0 10- 1 10- 1 103 102 1 10 10- 1 103 102 1 10 IC (mA) IC (mA) VCE = 1 V IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C
Fig. 8. BC817-25: DC current gain as a function of Fig. 9. BC817-25: Base-emitter saturation voltage as a collector current; typical values function of collector current; typical values
006aaa138 1 006aaa141 1.2 V (6) (5) (4) (3) (2) (1) CEsat IC (V) (A) 10- 1 0.8 (7) (8) (1) (9) (2) 10- 2 (3) 0.4 (10) 10- 3 0 10- 1 103 102 1 10 0 1 2 3 4 5 IC (mA) VCE (V) IC/IB = 10 Tamb = 25 °C (1) Tamb = 150 °C (1) IB = 13.0 mA (2) Tamb = 25 °C (2) IB = 11.7 mA (3) Tamb = -55 °C (3) IB = 10.4 mA
Fig. 10. BC817-25: Collector-emitter saturation voltage
(4) IB = 9.1 mA
as a function of collector current; typical values
(5) IB = 7.8 mA (6) IB = 6.5 mA (7) IB = 5.2 mA (8) IB = 3.9 mA (9) IB = 2.6 mA (10) IB = 1.3 mA
Fig. 11. BC817-25: Collector current as a function of collector-emitter voltage; typical values
BC817_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet Rev. 8 — 1 July 2022 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents