Datasheet NCV7329 (ON Semiconductor) - 5

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NCV7329 Table 4. DC CHARACTERISTICS
(VBB = 5 V to 18 V; TJ = −40°C to +150°C; Typical values are given at VBB = 12 V and TJ = 25°C Bus Load = 500 W (VBB to LIN); unless otherwise specified.)
Symbol Parameter Conditions Min. Typ. Max. Unit LIN BUS LINE (PIN LIN)
IBUS_LIM Current limitation for Driver Dominant State; VLIN = VBB_MAX 40 200 mA IBUS_PAS_dom Receiver Leakage current; Driver OFF TxD = High; VLIN = 0 V; VBB = 12 V −1 mA Isleep Receiver Leakage current; Sleep mode; VLIN = 0 V; VBB = 12 V −16 −8 −3 mA see Figure 1 IBUS_PAS_rec Receiver Leakage current; Driver OFF; TxD = High; 8 V < VBB < 18 V; 20 mA (Note 8) 8 V < VLIN < 18 V; VLIN ≥ VBB VSERDiode Voltage Drop on Serial Diode Voltage drop on DS, see Figure 1 0.4 0.7 1 V RSLAVE Internal Pull−up Resistance see Figure 1 20 30 60 kW CLIN Capacitance on Pin LIN, (Note 8) 20 30 pF 8. Values based on design and characterization. Not tested in production.
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