IRFZ24 www.vishay.com Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L VDS VDS Vary t tp p to obtain required I V AS DD R D.U.T. G A + V V - DD DS IAS 10 V t 0.01 I p Ω AS Fig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test S21-1262-Rev. D, 27-Dec-2021 5 Document Number: 91406 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000