Datasheet IRFZ24 (Vishay) - 4
| Fabricante | Vishay |
| Descripción | Power MOSFET |
| Páginas / Página | 7 / 4 — IRFZ24. Fig. 7 - Typical Source-Drain Diode Forward Voltage. Fig. 9 - … |
| Formato / tamaño de archivo | PDF / 204 Kb |
| Idioma del documento | Inglés |
IRFZ24. Fig. 7 - Typical Source-Drain Diode Forward Voltage. Fig. 9 - Maximum Drain Current vs. Case Temperature
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IRFZ24
www.vishay.com Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
Fig. 8 - Maximum Safe Operating Area
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms
S21-1262-Rev. D, 27-Dec-2021
4
Document Number: 91406 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
Fig. 8 - Maximum Safe Operating Area
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms
S21-1262-Rev. D, 27-Dec-2021
4
Document Number: 91406 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000