Datasheet FDS6675 (Fairchild) - 3
| Fabricante | Fairchild |
| Descripción | Single P-Channel Logic Level PowerTrench MOSFET |
| Páginas / Página | 9 / 3 — Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. … |
| Formato / tamaño de archivo | PDF / 356 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. Units. OFF CHARACTERISTICS. ON CHARACTERISTICS
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Electrical Characteristics
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = -250 µA -30 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = -250 µA, Referenced to 25 oC -22 mV/oC DSS J D I Zero Gate Voltage Drain Current V = -24 V, V = 0 V -1 µA DSS DS GS T = 55°C -10 µA J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS
ON CHARACTERISTICS
(Note 2) V Gate Threshold Voltage V = V , I = -250 µA -1 -1.7 -3 V GS(th) DS GS D ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = 250 µA, Referenced to 25 oC 4.3 mV/oC GS(th) J D R Static Drain-Source On-Resistance V = -10 V, I = -11 A 0.011 0.014 Ω DS(ON) GS D T =125°C 0.016 0.023 J V = -4.5 V, I = -9 A 0.015 0.02 GS D I On-State Drain Current V = -10 V, V = -5 V -50 A D(ON) GS DS g Forward Transconductance V = -10 V, I = -11 A 32 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = -15 V, V = 0 V, 3000 pF iss DS GS f = 1.0 MHz C Output Capacitance 870 pF oss C Reverse Transfer Capacitance 360 pF rss
SWITCHING CHARACTERISTICS
(Note 2) t Turn - On Delay Time V = -15 V, I = -1 A 12 22 ns D(on) DS D t Turn - On Rise Time r V = -10 V, R = 6 Ω 16 27 ns GEN GEN t Turn - Off Delay Time 50 80 ns D(off) t Turn - Off Fall Time 100 140 ns f Q Total Gate Charge V = -15 V, I = -11 A, 30 42 nC g DS D Q Gate-Source Charge V = -5 V 9 nC gs GS Q Gate-Drain Charge 11 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current -2.1 A S V Drain-Source Diode Forward Voltage V = 0 V, I = -2.1 A (Note 2) -0.72 -1.2 V SD GS S Notes: 1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by JA θJC design while Rθ is determined by the user's board design. CA b. 105OC/W on a 0.02 in2 a. 50OC/W on a 0.5 in2 c. 125OC/W on a 0.003 in2 pad pad of 2oz copper. pad of 2oz copper. of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = -250 µA -30 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = -250 µA, Referenced to 25 oC -22 mV/oC DSS J D I Zero Gate Voltage Drain Current V = -24 V, V = 0 V -1 µA DSS DS GS T = 55°C -10 µA J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS
ON CHARACTERISTICS
(Note 2) V Gate Threshold Voltage V = V , I = -250 µA -1 -1.7 -3 V GS(th) DS GS D ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = 250 µA, Referenced to 25 oC 4.3 mV/oC GS(th) J D R Static Drain-Source On-Resistance V = -10 V, I = -11 A 0.011 0.014 Ω DS(ON) GS D T =125°C 0.016 0.023 J V = -4.5 V, I = -9 A 0.015 0.02 GS D I On-State Drain Current V = -10 V, V = -5 V -50 A D(ON) GS DS g Forward Transconductance V = -10 V, I = -11 A 32 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = -15 V, V = 0 V, 3000 pF iss DS GS f = 1.0 MHz C Output Capacitance 870 pF oss C Reverse Transfer Capacitance 360 pF rss
SWITCHING CHARACTERISTICS
(Note 2) t Turn - On Delay Time V = -15 V, I = -1 A 12 22 ns D(on) DS D t Turn - On Rise Time r V = -10 V, R = 6 Ω 16 27 ns GEN GEN t Turn - Off Delay Time 50 80 ns D(off) t Turn - Off Fall Time 100 140 ns f Q Total Gate Charge V = -15 V, I = -11 A, 30 42 nC g DS D Q Gate-Source Charge V = -5 V 9 nC gs GS Q Gate-Drain Charge 11 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current -2.1 A S V Drain-Source Diode Forward Voltage V = 0 V, I = -2.1 A (Note 2) -0.72 -1.2 V SD GS S Notes: 1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by JA θJC design while Rθ is determined by the user's board design. CA b. 105OC/W on a 0.02 in2 a. 50OC/W on a 0.5 in2 c. 125OC/W on a 0.003 in2 pad pad of 2oz copper. pad of 2oz copper. of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2