Datasheet BAS70, BAS70-04, BAS70-05, BAS70-06 (Diodes) - 2

FabricanteDiodes
DescripciónSurface-Mount Schottky Barrier Diode
Páginas / Página5 / 2 — BAS70/ -04/ -05/ -06. Marking Information. Kxx. M Y. Year. 2007. 2023. …
Formato / tamaño de archivoPDF / 524 Kb
Idioma del documentoInglés

BAS70/ -04/ -05/ -06. Marking Information. Kxx. M Y. Year. 2007. 2023. 2024. 2025. 2026. 2027. 2028. 2029. 2030. 2031. 2032. Code. Month. Jan. Feb. Mar. Apr. May

BAS70/ -04/ -05/ -06 Marking Information Kxx M Y Year 2007 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 Code Month Jan Feb Mar Apr May

Línea de modelo para esta hoja de datos

Versión de texto del documento

BAS70/ -04/ -05/ -06 Marking Information
Kxx = Product Type Marking Code: K7C = BAS70 K7D = BAS70-04&BAS70-04Q K7E = BAS70-05
Kxx M Y
K7F = BAS70-06 YM & YM = Date Code Marking Y = Year (ex: K = 2023) M = Month (ex: 2 = Feb) Date Code Key
Year 2007 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 Code
U … K L M N P R S T U V
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code
1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 70 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 49 V Maximum Forward Continuous Current (Note 6) IFM 70 mA Non-Repetitive Peak Forward Surge Current @ t  1.0s IFSM 100 mA
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 6) RJA 625 °C/W Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -65 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 70 — V IR = 10µA 410 tP < 300µs, IF = 1.0mA Forward Voltage VF — mV 1000 tP < 300µs, IF = 15mA Reverse Current (Note 7) IR — 100 nA tP < 300µs, VR = 50V Total Capacitance CT — 2.0 pF VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = 1.0mA, Reverse Recovery Time tRR — 5.0 ns RL = 100Ω I Reverse Recovery Time (For BAS70-04 Only) F = IR = 10mA to IR = 1.0mA, tRR — 2.0 ns RL = 100Ω Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. BAS70/ -04/ -05/ -06 2 of 5 November 2023 Document number: DS11007 Rev. 27 - 2
www.diodes.com
© 2023 Copyright Diodes Incorporated. All Rights Reserved.