link to page 4 link to page 4 MOC3051M, MOC3052M, MOC3053MMAXIMUM RATINGS TA = 25°C unless otherwise specified. SymbolParameterValueUnitTOTAL DEVICE TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +85 °C TJ Junction Temperature Range −40 to +100 °C TSOL Lead Solder Temperature 260 for 10 seconds °C PD Total Device Power Dissipation at 25°C Ambient 330 mW Derate Above 25°C 4.4 mW/°C EMITTER IF Continuous Forward Current 60 mA VR Reverse Voltage 3 V PD Total Power Dissipation at 25°C Ambient 100 mW Derate Above 25°C 1.33 mW/°C DETECTOR VDRM Off−State Output Terminal Voltage 600 V ITSM Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A PD Total Power Dissipation at 25°C Ambient 300 mW Derate Above 25°C 4 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICSSymbolParametersCharacteristicMinTypMaxUnitEMITTER VF Input Forward Voltage IF = 10 mA 1.18 1.50 V IR Reverse Leakage Current VR = 3 V 0.05 100 mA DETECTOR IDRM Peak Blocking Current, Either Direction VDRM = 600 V, IF = 0 10 100 nA (Note 1) VTM Peak On−State Voltage, Either Direction ITM = 100 mA peak, 2.2 2.5 V IF = 0 dv/dt Critical Rate of Rise of Off−State Voltage IF = 0, VDRM = 600 V 1000 V/ms TRANSFER CHARACTERISTICSSymbolDC CharacteristicTest ConditionsDeviceMinTypMaxUnit IFT LED Trigger Current, Main Terminal MOC3051M 15 mA Either Direction Voltage = 3 V (Note 2) MOC3052M 10 MOC3053M 6 IH Holding Current, All 540 mA Either Direction www.onsemi.com3