Datasheet BSS84 (Diodes) - 4
| Fabricante | Diodes |
| Descripción | P-Channel Enhancement Mode MOSFET |
| Páginas / Página | 6 / 4 — BSS84. www.diodes.com |
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| Idioma del documento | Inglés |
BSS84. www.diodes.com
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BSS84
100 10 f = 1MHz 9 F) (p 8 Ciss NCE 7 TA CI 6 ) A P 10 (V 5 Coss V GS N CA 4 IO 3 VDS = -10V, ID = -0.1A 2 , JUNCT Crss C T 1 1 0 0 5 10 15 20 25 30 35 40 0 0.1 0.2 0.3 0.4 0.5 0.6 VDS, DRAIN-SOURCE VOLTAGE (V) Qg (nC) Fig. 7 Typical Junction Capacitance Fig. 8 Gate Charge 10 RDS(ON) Limited PW = 100µs ) 1 P (A W = 1ms NT PW = 10ms 0.1 IN CURRE PW = 100ms , DRA T I D 0.01 J(Max) = 150℃ T P A = 25℃ W = 1s Single Pulse DUT on 1*MRP PW = 10s Board DC VGS = -10V 0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 SOA, Safe Operation Area BSS84 4 of 6 August 2021 Document number: DS30149 Rev. 25 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features and Benefits Product Summary Description and Applications Mechanical Data Marking Information Package Outline Dimensions Suggested Pad Layout
100 10 f = 1MHz 9 F) (p 8 Ciss NCE 7 TA CI 6 ) A P 10 (V 5 Coss V GS N CA 4 IO 3 VDS = -10V, ID = -0.1A 2 , JUNCT Crss C T 1 1 0 0 5 10 15 20 25 30 35 40 0 0.1 0.2 0.3 0.4 0.5 0.6 VDS, DRAIN-SOURCE VOLTAGE (V) Qg (nC) Fig. 7 Typical Junction Capacitance Fig. 8 Gate Charge 10 RDS(ON) Limited PW = 100µs ) 1 P (A W = 1ms NT PW = 10ms 0.1 IN CURRE PW = 100ms , DRA T I D 0.01 J(Max) = 150℃ T P A = 25℃ W = 1s Single Pulse DUT on 1*MRP PW = 10s Board DC VGS = -10V 0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 SOA, Safe Operation Area BSS84 4 of 6 August 2021 Document number: DS30149 Rev. 25 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features and Benefits Product Summary Description and Applications Mechanical Data Marking Information Package Outline Dimensions Suggested Pad Layout