Datasheet TPD4164K (Toshiba) - 9
Fabricante | Toshiba |
Descripción | High Voltage Monolithic Silicon Power IC |
Páginas / Página | 13 / 9 — 9. Operating Ranges. Table 9.1 Operating Ranges(Ta = 25°C unless … |
Formato / tamaño de archivo | PDF / 455 Kb |
Idioma del documento | Inglés |
9. Operating Ranges. Table 9.1 Operating Ranges(Ta = 25°C unless otherwise specified). 10. Electrical Characteristics
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TPD4164K
9. Operating Ranges Table 9.1 Operating Ranges(Ta = 25°C unless otherwise specified)
Characteristics Symbol Test Condition Min Typ. Max Unit VBB ― 50 280 450 Operat ing power s upply v oltage V VCC ― 13.5 15 16.5
10. Electrical Characteristics Table 10.1 Electrical Characteristics(Ta = 25°C unless otherwise specified)
Characteristics Symbol Test Condition Min Typ. Max Unit IBB VBB = 450 V ― ― 0.5 Current dissipation mA ICC VCC = 15 V ― 0.8 1.5 IBS (ON) VBS = 5 V, high side ON ― 90 150 Bootstrap Current dissipation μA IBS (OFF) VBS = 5 V, high side OFF ― 80 140 VIH VIN = “H”, VCC = 15 V 2.5 ― ― Input voltage V VIL VIN = “L” , VCC = 15 V ― ― 1.5 IIH VIN = 5 V ― ― 50 Input current μA IIL VIN = 0 V ― ― 10 VCEsatH VCC = 15 V, IC = 1 A, high side ― 3.0 3.7 Output saturation voltage V VCEsatL VCC = 15 V, IC = 1 A, low side ― 3.0 3.7 VFH IF = 1 A, high side ― 2.5 3.2 FRD forward voltage V VFL IF = 1 A, low side ― 2.5 3.2 Regulator voltage VREG VCC = 15 V, IREG = 30 mA 4.5 5 5.5 V Over current protection voltage VR ― 0.46 0.5 0.54 V Over current protection delay time Dt ― ― 2 3 μs Thermal shutdown temperature TSD VCC = 15 V 135 ― 165 °C Thermal shutdown hysteresis TSD VCC = 15 V ― 50 ― °C VCC under voltage protection VCCUVD ― 10 11 12 V VCC under voltage protection V recovery CCUVR ― 10.5 11.5 12.5 V VBS under voltage protection VBSUVD ― 2 3 4 V VBS under voltage protection recovery VBSUVR ― 2.5 3.5 4.5 V DIAG saturation voltage VDIAGsat IDIAG = 5 mA ― ― 0.5 V Minimum operating pulse width PWmin VBB = 280 V, VCC = 15 V 0.8 ― ― μs SD Input voltage VSD VCC =15V ― 2.5 ― V Output on delay time ton VBB = 280 V, VCC = 15 V, IC = 1 A ― 1.0 1.5 μs Output off delay time toff VBB = 280 V, VCC = 15 V, IC = 1 A ― 1.2 1.7 μs Dead time tdead VBB = 280 V, VCC = 15 V, IC = 1 A 1 ― ― μs FRD reverse recovery time trr VBB = 280 V, VCC = 15 V, IC = 1 A ― 200 ― ns © 20 23 9 2023-05-17 Toshiba Electronic Devices & Storage Corporation Rev.1.0