Datasheet TPD4163K (Toshiba) - 7

TPD4163K
7.2. Handling precautions
(1) Please control the input signal in the state to which the VCC voltage is steady. Both of the order of the VBB power supply and the VCC power supply are not cared about either. Note that if the power supply is switched off as described above, this product may be destroyed if the current regeneration route to the VBB power supply is blocked when the VBB line is disconnected by a relay or similar while the motor is still running. (2) Over voltage caused by a surge voltage over the absolute maximum ratings may destroy the circuit. Accordingly, be careful of handling the IC or of surge voltage in its application environment.
7.3. Description of Protection Function
(1) Under voltage protection This product incorporates under voltage protection circuits to prevent the IGBT from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the VCC power supply falls to this product internal setting VCCUVD (=11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the VCC power supply reaches 0.5 V higher than the shutdown voltage (VCCUVR (=11.5 V typ.)), this product is automatically restored and the IGBT is turned on again by the input. DIAG output is reversed at the time of VCC under-voltage protection. When the VCC power supply is less than 7 V, DIAG output isn't sometimes reversed. When the VBS supply voltage drops VBSUVD (=3 V typ.), the high-side IGBT output shuts down. When the VBS supply voltage reaches 0.5 V higher than the shutdown voltage (VBSUVR (=3.5V typ.)), the IGBT is turned on again by the input signal. (2) Over-current protection This product incorporates a over-current protection circuit to protect itself against over-current at startup or when a motor is locked. This protection function detects voltage generated in the current detection resistor connected to the RS pin. When this voltage exceeds VR (=0.5 V typ.), the IGBT output, which is on, temporarily shuts down after a delay time, preventing any additional current from flowing to this product. The next al “L” signal releases the shutdown state. (3) Thermal shutdown This product incorporates a thermal shutdown circuit to protect itself against the abnormal state when its temperature rises excessively. When the temperature of this chip rises to the internal setting TSD due to external causes or internal heat generation, all IGBT outputs shut down regardless of the input. This protection function has hysteresis TSD (= 50°C typ.). When the chip temperature falls to TSD − TSD, the chip is automatically restored and the IGBT is turned on again by the input. Because the chip contains just one temperature detection location, when the chip heats up due to the IGBT, for example, the differences in distance from the detection location in the IGBT (the source of the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the thermal shutdown temperature when the circuit started to operate. (4) SD function SD pin is the input signal pin to shut down the internal output IGBT. Output of all IGBT is shut down after delay times (2 μs (typ.)) when "L" signal is input to the SD pin from external circuit (MCU etc.). It is possible to shut down IC when overcurrent and others is detected by external circuit. Shut down state is released by al of IC input signal "L". At open state of SD pin, shut down function can not operate. © 20 23 7 2023-06-23 Toshiba Electronic Devices & Storage Corporation Rev.1.0