Datasheet AH3975Q, AH3976Q, AH3977Q, AH3978Q (Diodes) - 4

AH3975Q/AH3976Q/AH3977Q/AH3978Q Electrical Characteristics
(Note 6) (@TA = -40°C to +150°C, VDD = 2.7V to 27V, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Units
VDD Supply voltage Operating 2.7 12 27 V IDD Supply current VDD = 2.7V to 27V 3.5 4.7 7 mA VUVLO Undervoltage lockout threshold VDD falling 2.0 2.35 2.7 V IDDR Reverse supply current VDD = -18V, TA = -40°C to +150°C -1.5 — — mA VOsat Output saturation voltage B > BOP, IOUT = 10mA — 0.2 0.5 V ILEK Output leakage current VOUT = 12V, VDD = 12V, B < BRP — 0.1 1 µA ILIM Output current limit Output on 11 25 44 mA TTP Thermal protection threshold Junction temperature +165 +180 — °C Thermal protection release TTPR Junction temperature — +155 — °C threshold fM Maximum switching frequency* B > 3 x BOP, alternative square magnet field 40 60 — kHz fC Chopping frequency* — — 500 — kHz tPON Power on time (Note 7) VDD = 12V, dVDD/dt > 2.7V/µs — 13 — µs tR Output rise time* VDD = 12V, pullup resistor 1kΩ, CL = 50pF — 0.2 1 µs tF Output fall time* VDD = 12V, pullup resistor 1kΩ, CL = 50pF — 0.2 1 µs tD Response delay time (Note 8) B > 3 x BOP — 13 — µs tDC Count signal delay (Note 6) — 50 400 1000 ns tJ Output jitter (Note 6) — — ±5 — µsRMS dHALL Hall plate distance — — 1.45 — mm VZ Zener clamp voltage IDD = 8mA, TA = +25°C 36 — — V * Guaranteed by design. Notes: 6. Typical values are defined at TA = +25°C, VDD = 12V. Maximum and minimum values over the operating temperature range are not tested in production but guaranteed by design, process control and characterization. 7. Time from applying VDD ≥ 2.7V to the sensor until the output state is valid. 8. Time delayed from the magnetic threshold reached to the output rise or fall. AH3975Q/AH3976Q/AH3977Q/AH3978Q 4 of 18 April 2023 Document number: DS43743 Rev. 1 - 2
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