Datasheet NOA1212 (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | Ambient Light Sensor with Dark Current Compensation |
| Páginas / Página | 9 / 2 — NOA1212. Figure 2. Simplified Block Diagram. Table 1. PIN FUNCTION … |
| Formato / tamaño de archivo | PDF / 171 Kb |
| Idioma del documento | Inglés |
NOA1212. Figure 2. Simplified Block Diagram. Table 1. PIN FUNCTION DESCRIPTION. Pin. Pin Name. Description
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NOA1212
GS2 GS1 GB2 GB1 Amp V Amp OUT IOUT hn RL Photo Reference Diode Diode
Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin Pin Name Description
1 VDD Power pin. 2 VSS Ground pin. 3 GB1 In conjunction with GB2, selects between three gain modes and power down. 4 GB2 In conjunction with GB1, selects between three gain modes and power down. 5 NC Not connected. This may be connected to ground or left floating. 6 IOUT Analog current output. EP VSS Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit
Input power supply VDD 6 V Input voltage range VIN −0.3 to VDD + 0.3 V Output voltage range VOUT −0.3 to VDD + 0.2 V Output current range Io 0 to 15 mA Maximum Junction Temperature TJ(max) −40 to 85 °C Storage Temperature TSTG −40 to 85 °C ESD Capability, Human Body Model (Note 1) ESDHBM 2 kV ESD Capability, Charged Device Model (Note 1) ESDCDM 750 V ESD Capability, Machine Model (Note 1) ESDMM 150 V Moisture Sensitivity Level MSL 3 − Lead Temperature Soldering (Note 2) TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Charged Device Model tested per ESD−STM5.3.1−1999 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78 2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
www.onsemi.com 2
NOA1212
GS2 GS1 GB2 GB1 Amp V Amp OUT IOUT hn RL Photo Reference Diode Diode
Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin Pin Name Description
1 VDD Power pin. 2 VSS Ground pin. 3 GB1 In conjunction with GB2, selects between three gain modes and power down. 4 GB2 In conjunction with GB1, selects between three gain modes and power down. 5 NC Not connected. This may be connected to ground or left floating. 6 IOUT Analog current output. EP VSS Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit
Input power supply VDD 6 V Input voltage range VIN −0.3 to VDD + 0.3 V Output voltage range VOUT −0.3 to VDD + 0.2 V Output current range Io 0 to 15 mA Maximum Junction Temperature TJ(max) −40 to 85 °C Storage Temperature TSTG −40 to 85 °C ESD Capability, Human Body Model (Note 1) ESDHBM 2 kV ESD Capability, Charged Device Model (Note 1) ESDCDM 750 V ESD Capability, Machine Model (Note 1) ESDMM 150 V Moisture Sensitivity Level MSL 3 − Lead Temperature Soldering (Note 2) TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Charged Device Model tested per ESD−STM5.3.1−1999 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78 2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
www.onsemi.com 2