Datasheet IRFP240 (Vishay) - 4

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DescripciónPower MOSFET
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IRFP240. Fig. 7 - Typical Source-Drain Diode Forward Voltage. Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFP240 Fig 7 - Typical Source-Drain Diode Forward Voltage Fig 9 - Maximum Drain Current vs Case Temperature

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IRFP240
www.vishay.com Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
Fig. 8 - Maximum Safe Operating Area
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S22-0046, Rev. C, 24-Jan-2021
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