Datasheet TN0200K (Vishay) - 4
| Fabricante | Vishay |
| Descripción | N-Channel 20-V (D-S) MOSFETs |
| Páginas / Página | 5 / 4 — New Product. TN0200K. TYPICAL CHARACTERISTICS. Threshold Voltage. Gate … |
| Formato / tamaño de archivo | PDF / 77 Kb |
| Idioma del documento | Inglés |
New Product. TN0200K. TYPICAL CHARACTERISTICS. Threshold Voltage. Gate Current vs. Gate-Source Voltage
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New Product TN0200K
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.2 100000 10000 0.1 I 1000 D = 50 µA A) - 0.0 100 riance (V) TJ = 150 °C a - 0.1 V 10 – Gate Current (µ 1 GS(th) - 0.2 V I GSS 0.1 TJ = 25 °C - 0.3 0.01 - 0.4 0.001 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 T ° J – Temperature ( C) VGS – Gate-to-Source Voltage (V)
Threshold Voltage Gate Current vs. Gate-Source Voltage
5 10 IDM Limited *r 4 DS(on) Limited 1 1 ms 3 10 ms ID(on) er (W) 0.1 Limited w 100 ms o P 2 ain Current (A) 1 s 10 s – Dr dc I D TA = 25 °C 0.01 1 Single Pulse BVDSS Limited 0 0.001 0.01 0.1 1 10 100 600 0.1 1 10 100 Time (sec) VDS – Drain-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
*VGS minimum VGS at which rDS(on) is specified
Safe Operating Area
2 1 Duty Cycle = 0.5 ransient T 0.2 e fectiv 0.1 mal Impedance 0.1 ed Ef 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (sec)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72678. www.vishay.com Document Number: 72678 4 S-71198–Rev. B, 18-Jun-07 Document Outline Datasheet Disclaimer
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.2 100000 10000 0.1 I 1000 D = 50 µA A) - 0.0 100 riance (V) TJ = 150 °C a - 0.1 V 10 – Gate Current (µ 1 GS(th) - 0.2 V I GSS 0.1 TJ = 25 °C - 0.3 0.01 - 0.4 0.001 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 T ° J – Temperature ( C) VGS – Gate-to-Source Voltage (V)
Threshold Voltage Gate Current vs. Gate-Source Voltage
5 10 IDM Limited *r 4 DS(on) Limited 1 1 ms 3 10 ms ID(on) er (W) 0.1 Limited w 100 ms o P 2 ain Current (A) 1 s 10 s – Dr dc I D TA = 25 °C 0.01 1 Single Pulse BVDSS Limited 0 0.001 0.01 0.1 1 10 100 600 0.1 1 10 100 Time (sec) VDS – Drain-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
*VGS minimum VGS at which rDS(on) is specified
Safe Operating Area
2 1 Duty Cycle = 0.5 ransient T 0.2 e fectiv 0.1 mal Impedance 0.1 ed Ef 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (sec)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72678. www.vishay.com Document Number: 72678 4 S-71198–Rev. B, 18-Jun-07 Document Outline Datasheet Disclaimer