Datasheet NDS331N (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Páginas / Página | 9 / 6 — NDS331N. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 13. Transconductance … |
| Formato / tamaño de archivo | PDF / 282 Kb |
| Idioma del documento | Inglés |
NDS331N. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 13. Transconductance Variation with Drain
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NDS331N TYPICAL ELECTRICAL CHARACTERISTICS
(continued) 8 50 This Area is Limited by r V DS(on) DS = 5.0 V TJ = −55°C 10 6 100 s 25°C 1 ms 1 4 125°C 10 ms , Drain Current (A) Single Pulse 100 ms ransconductance (Siemens) 2 I D 0.1 T , T J = Max Rated RJA = 270°C/W Curve Bent to g FS TA = 25°C Measured Date 0 0.01 0 1 2 3 4 0.1 1 10 60 ID, Drain Current (A) VDS, Drain to Source Voltage (V)
Figure 13. Transconductance Variation with Drain Figure 14. Maximum Safe Operating Area Current and Temperature
1 1.8 0.8 1.6 0.6 1a 1.4 1b 0.4 1a −State Drain Current (A) 4.5″x5″ FR−4 Board −State Power Dissipation (W) 1.2 4.5 0.2 ″x5″ FR−4 Board 1b TA = 25°C TA = 25°C , Steady Still Air Still Air I D Steady VGS = 2.7 V 0 1 0 0.1 0.2 0.3 0.4 0 0.1 0.2 0.3 0.4 2oz Copper Mounting Pad Area (in2) 2oz Copper Mounting Pad Area (in2)
Figure 15. SUPERSOT−3 Maximum Steady−State Figure 16. Maximum Steady−State Drain Power Dissipation versus Copper Mounting Pad Area Current versus Copper Mounting Pad Area
2 Duty Cycle−Descending Order 1 D = 0.5 0.2 0.1 P 0.1 DM 0.05 0.02 t 0.01 1t2 NOTES: 0.01 ZJA(t)= r(t) x RJA , Normalized Thermal Impedance Single Pulse RJA = 270°C/W Peak TJ = PDM x ZJA(t) + TA Z JA Duty Cycle, D = t1 / t2 0.00110−4 10−3 10−2 10−1 1 10 100 1000 t, Rectangular Pulse Duration (s)
Figure 17. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b. Response will change depending on the circuit board design.
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NDS331N TYPICAL ELECTRICAL CHARACTERISTICS
(continued) 8 50 This Area is Limited by r V DS(on) DS = 5.0 V TJ = −55°C 10 6 100 s 25°C 1 ms 1 4 125°C 10 ms , Drain Current (A) Single Pulse 100 ms ransconductance (Siemens) 2 I D 0.1 T , T J = Max Rated RJA = 270°C/W Curve Bent to g FS TA = 25°C Measured Date 0 0.01 0 1 2 3 4 0.1 1 10 60 ID, Drain Current (A) VDS, Drain to Source Voltage (V)
Figure 13. Transconductance Variation with Drain Figure 14. Maximum Safe Operating Area Current and Temperature
1 1.8 0.8 1.6 0.6 1a 1.4 1b 0.4 1a −State Drain Current (A) 4.5″x5″ FR−4 Board −State Power Dissipation (W) 1.2 4.5 0.2 ″x5″ FR−4 Board 1b TA = 25°C TA = 25°C , Steady Still Air Still Air I D Steady VGS = 2.7 V 0 1 0 0.1 0.2 0.3 0.4 0 0.1 0.2 0.3 0.4 2oz Copper Mounting Pad Area (in2) 2oz Copper Mounting Pad Area (in2)
Figure 15. SUPERSOT−3 Maximum Steady−State Figure 16. Maximum Steady−State Drain Power Dissipation versus Copper Mounting Pad Area Current versus Copper Mounting Pad Area
2 Duty Cycle−Descending Order 1 D = 0.5 0.2 0.1 P 0.1 DM 0.05 0.02 t 0.01 1t2 NOTES: 0.01 ZJA(t)= r(t) x RJA , Normalized Thermal Impedance Single Pulse RJA = 270°C/W Peak TJ = PDM x ZJA(t) + TA Z JA Duty Cycle, D = t1 / t2 0.00110−4 10−3 10−2 10−1 1 10 100 1000 t, Rectangular Pulse Duration (s)
Figure 17. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b. Response will change depending on the circuit board design.
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