Datasheet NDS331N (ON Semiconductor) - 2

FabricanteON Semiconductor
DescripciónN-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDS331N. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Ratings. Unit. THERMAL CHARACTERISTICS. www.onsemi.com

NDS331N ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit THERMAL CHARACTERISTICS www.onsemi.com

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NDS331N ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit
VDSS Drain−Source Voltage 20 V VGSS Gate−Source Voltage − Continuous ±8 V ID Maximum Drain Current – Continuous (Note 1a) 1.3 A Maximum Drain Current – Pulsed 10 PD Maximum Power Dissipation (Note 1a) 0.5 W Maximum Power Dissipation (Note 1b) 0.46 TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit
RJA Thermal Resistance, Junction−to−Ambient (Note 1a) 250 °C/W RJC Thermal Resistance, Junction−to−Case (Note 1) 75 °C/W 1. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user’s board design. T T P J * TA J * TA D(t) + + + I2 (t) R R D DS(on)@TJ JA(t) RJC ) RCA(t) Typical RJA using the board layouts shown below on 4.5″x5″ FR−4 PCB in a still air environment: a) 250°C/W when mounted on a 0.02 in2 pad b) 270°C/W when mounted on a 0.001 in2 pad of 2oz copper. of 2oz copper. Scale 1:1 on letter size paper
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