Datasheet 2N6667, 2N6668 (ON Semiconductor) - 4

link to page 4 link to page 3
2N6667, 2N6668
20 100 μs 10 5 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second 5 dc (AMPS) 3 breakdown. Safe operating area curves indicate IC − VCE 1 ms 2 limits of the transistor that must be observed for reliable 1 operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 0.5 TJ = 150°C OR CURRENT 0.3 The data of Figure 6 is based on T 2N6667 J(pk) = 150_C; TC is 0.2 BONDING WIRE LIMIT 2N6668 variable depending on conditions. Second breakdown pulse 0.1 THERMAL LIMIT @ TC = 25°C limits are valid for duty cycles to 10% provided TJ(pk) , COLLECT SECOND BREAKDOWN LIMIT I C < 150_C. T 0.05 J(pk) may be calculated from the data in Figure 5. CURVES APPLY BELOW RATED VCEO 0.03 At high case temperatures, thermal limitations will reduce 0.02 the power that can be handled to values less than the 1 2 3 5 7 10 20 30 50 70 100 limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum Safe Operating Area
10,000 300 5000 GAIN 2000 TJ = 25°C 1000 200 CURENT 500 T ANCE (pF) C = 25°C C 200 ob V C CE = 4 VOLTS ACIT ib I 100 100 C = 3 AMPS C, CAP 70 , SMALL-SIGNAL 50 FE 50 h 20 10 30 1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 0.1 0.2 0.5 1 2 5 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Small−Signal Current Gain Figure 8. Typical Capacitance
20,000 2.6 TS) VCE = 3 V TJ = 25°C 10,000 TJ = 150°C 2.2 7000 TAGE (VOL IC = 2 A 4 A 6 A GAIN 5000 3000 1.8 2000 TJ = 25°C 1.4 , DC CURRENT 1000 OR-EMITTER VOL FEh 700 500 1 TJ = - 55°C , COLLECT 300 CE 200 V 0.6 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (mA)
Figure 9. Typical DC Current Gain Figure 10. Typical Collector Saturation Region http://onsemi.com 4