Datasheet BSS100, BSS123 (Fairchild) - 3
| Fabricante | Fairchild |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Páginas / Página | 10 / 3 — Typical Electrical Characteristics. Figure 1. On-Region Characteristics. … |
| Formato / tamaño de archivo | PDF / 293 Kb |
| Idioma del documento | Inglés |
Typical Electrical Characteristics. Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate
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Typical Electrical Characteristics
0 .6 2 .4 V = 1 0 V GS 5 .0 3 .0 0 .5 4 .0 V = 2 .5 V GS 3 .5 2 0 .4 LIZED MA R 3 .0 0 .3 2 .5 1 .6 NO 3 .5 4 .0 0 .2 DS(on) 5 .0 R , 1 .2 1 0 0 .1 I , DRAIN-SOURCE CURRENT (A) D 2 .0 DRAIN-SOURCE ON-RESISTANCE 0 0 .8 0 1 2 3 4 5 0 0 .1 0 .2 0 .3 0 .4 0 .5 0 .6 V , DRAIN-SOURCE VOLTAGE (V) I , DRA IN CURRENT (A) DS D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2 .2 3 V = 10V 2 I = 2 2 0 m A GS D 2 .5 V =10V 1 .8 GS T = 1 2 5 ° C J 1 .6 2 1 .4 1 .5 RMALIZED 1 .2 2 5 ° C NO 1 1 DS(ON)R , NORMALIZED DS(on) -55°C 0 .8 R , 0 .5 DRAIN-SOURCE ON-RESISTANCE 0 .6 DRAIN-SOURCE ON-RESISTANCE 0 .4 0 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 0 .2 0 .4 0 .6 0 .8 1 T , JUNCTION TEM PERA T U RE (°C) J I , DRAIN CURRENT (A) D
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain with Temperature. Current and Temperature.
1 .2 1 .15 I = 2 5 0 µ A V = V D DS GS E I = 2 5 0 µ A 1 .1 D 1 .1 IZED WN VOLTAG 1 1 .05 MAL 0 .9 1 th DSS V , NORMALIZED BV , NOR 0 .8 0 .95 E-SOURCE THRESHOLD VOLTAGE GAT DRAIN-SOURCE BREAKDO 0 .7 0 .9 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 T , JU N CTION TEMPERATURE (°C) J T , JUNCTION TEMPERATURE (°C) J
Figure 5. Gate Threshold Variation with Figure 6. Breakdown Voltage Variation with Temperature. Temperature.
BSS100 Rev. F1 / BSS123 Rev. F1 Document Outline Main Menu Power PSG MOSFET PSG Search fairchildsemi.com
0 .6 2 .4 V = 1 0 V GS 5 .0 3 .0 0 .5 4 .0 V = 2 .5 V GS 3 .5 2 0 .4 LIZED MA R 3 .0 0 .3 2 .5 1 .6 NO 3 .5 4 .0 0 .2 DS(on) 5 .0 R , 1 .2 1 0 0 .1 I , DRAIN-SOURCE CURRENT (A) D 2 .0 DRAIN-SOURCE ON-RESISTANCE 0 0 .8 0 1 2 3 4 5 0 0 .1 0 .2 0 .3 0 .4 0 .5 0 .6 V , DRAIN-SOURCE VOLTAGE (V) I , DRA IN CURRENT (A) DS D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2 .2 3 V = 10V 2 I = 2 2 0 m A GS D 2 .5 V =10V 1 .8 GS T = 1 2 5 ° C J 1 .6 2 1 .4 1 .5 RMALIZED 1 .2 2 5 ° C NO 1 1 DS(ON)R , NORMALIZED DS(on) -55°C 0 .8 R , 0 .5 DRAIN-SOURCE ON-RESISTANCE 0 .6 DRAIN-SOURCE ON-RESISTANCE 0 .4 0 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 0 .2 0 .4 0 .6 0 .8 1 T , JUNCTION TEM PERA T U RE (°C) J I , DRAIN CURRENT (A) D
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain with Temperature. Current and Temperature.
1 .2 1 .15 I = 2 5 0 µ A V = V D DS GS E I = 2 5 0 µ A 1 .1 D 1 .1 IZED WN VOLTAG 1 1 .05 MAL 0 .9 1 th DSS V , NORMALIZED BV , NOR 0 .8 0 .95 E-SOURCE THRESHOLD VOLTAGE GAT DRAIN-SOURCE BREAKDO 0 .7 0 .9 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 T , JU N CTION TEMPERATURE (°C) J T , JUNCTION TEMPERATURE (°C) J
Figure 5. Gate Threshold Variation with Figure 6. Breakdown Voltage Variation with Temperature. Temperature.
BSS100 Rev. F1 / BSS123 Rev. F1 Document Outline Main Menu Power PSG MOSFET PSG Search fairchildsemi.com