Datasheet NDS351AN (ON Semiconductor) - 4

NDS351AN Typical Characteristics
5 2.8 V = 10V GS 4.5V 2.6 6.0V 4 2.4 VGS = 3.5V 2.2 3 2 3.5V 1.8
, NORMALIZED
2 1.6 4.0V
DS(ON)
1.4 4.5V
, DRAIN CURRENT (A) R I D
5.0V 1 1.2 6.0V 3.0V
DRAIN-SOURCE ON-RESISTANCE
1 10V 0.8 0 0 1 2 3 4 5 0 0.5 1 1.5 2
I V , DRAIN TO SOURCE VOLTAGE (V) D, DRAIN CURRENT (A) DS Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 0.25 ID = 1.4A ID = 0.7A VGS = 10V 0.225 1.4 0.2 1.2 0.175 T = 125oC A
, NORMALIZED
0.15 1
DS(ON) , ON-RESISTANCE (OHM)
0.125
R
0.8
DS(ON)
0.1
R DRAIN-SOURCE ON-RESISTANCE
TA = 25oC 0.6 0.075 -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10
T V J, JUNCTION TEMPERATURE (oC) GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage.
5 10 V = 5V DS V = 0V GS 4 1 TA = 125oC 3 0.1 25oC 2 0.01 T = 125oC
, DRAIN CURRENT (A)
A -55oC
I D
1 25oC 0.001
, REVERSE DRAIN CURRENT (A)
-55oC
I S
0 0.0001 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) V , BODY DIODE FORWARD VOLTAGE (V) SD Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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